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Study of the stability of 4H-SiC detectors by thermal neutron irradiation
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2015 (English)In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Trans Tech Publications Inc., 2015, 875-878 p.Conference paper (Refereed)Text
Abstract [en]

Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of10B inside the aluminum metallic contact. The first detector shows a high leakage current after10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection [1,2]

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. 875-878 p.
Keyword [en]
4H-SiC, Implantation, Neutron converter layer, Pn diodes, Thermal neutrons, Charged particles, Interference suppression, Ion implantation, Irradiation, Neutron sources, Neutrons, Nuclear reactors, Radiation detectors, Semiconductor detectors, Signal to noise ratio, Silicon carbide, Implantation parameters, Low signal-to-noise ratio, Neutron converters, P-n Diode, Pulse height spectrum, Thermal-neutron flux, Neutron irradiation
National Category
Accelerator Physics and Instrumentation
Identifiers
URN: urn:nbn:se:kth:diva-181559DOI: 10.4028/www.scientific.net/MSF.821-823.875ScopusID: 2-s2.0-84950323997ISBN: 9783038354789OAI: oai:DiVA.org:kth-181559DiVA: diva2:909232
Conference
21 September 2014 through 25 September 2014
Note

QC 20160304

Available from: 2016-03-04 Created: 2016-02-02 Last updated: 2016-03-04Bibliographically approved

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Hallén, Anders
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