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Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
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2015 (English)In: IEEE International Reliability Physics Symposium Proceedings, IEEE conference proceedings, 2015, XT21-XT26 p.Conference paper, Published paper (Refereed)
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Text
Abstract [en]

We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. XT21-XT26 p.
Keyword [en]
Graphene, Hot carriers, Integrated circuits, Applied stress, Bias temperature instability, Charged traps, Graphene field effect transistor (GFETs), Graphene field-effect transistors, Hot carrier degradation, Mobility degradation, Single layer, Field effect transistors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-181557DOI: 10.1109/IRPS.2015.7112834ISI: 000371888900167Scopus ID: 2-s2.0-84942912989ISBN: 9781467373623 (print)OAI: oai:DiVA.org:kth-181557DiVA: diva2:909241
Conference
IEEE International Reliability Physics Symposium, IRPS 2015, 19 April 2015 through 23 April 2015
Note

QC 20160304

Available from: 2016-03-04 Created: 2016-02-02 Last updated: 2016-04-11Bibliographically approved

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