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High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2002. , xi, 60 p.
Trita-EKT, ISSN 1650-8599 ; 2002:2
Keyword [en]
Silicon-Germanium (SiGe), heterojunction bipolar transistor (HBT), low-frequency noise, high-frequency noise, harmonic distortion, linearity, device simulation, collector profile, epitaxial base integration, radio frequency (RF), radio frequency inte
URN: urn:nbn:se:kth:diva-3324ISBN: OAI: diva2:9112
Public defence
NR 20140805Available from: 2002-04-11 Created: 2002-04-11Bibliographically approved

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