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Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrate
KTH, School of Electrical Engineering (EES), Electric power and energy systems.ORCID iD: 0000-0002-1755-1365
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2015 (English)In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Trans Tech Publications Inc., 2015, 452-455 p.Conference paper (Refereed)Text
Abstract [en]

Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. 452-455 p.
Keyword [en]
DBC substrate, Heat transfer, Pressure dependence, SiC, Thermal contact resistance, Computational fluid dynamics, Contact resistance, Metallizing, Silicon carbide, Silver, Thermal conductivity of solids, Analytical calculation, Computational fluid dynamics simulations, Direct bonded coppers, Experimental methods, Pressure dependent, Heat resistance
National Category
Fluid Mechanics and Acoustics
Identifiers
URN: urn:nbn:se:kth:diva-181590DOI: 10.4028/www.scientific.net/MSF.821-823.452ScopusID: 2-s2.0-84950349739ISBN: 9783038354789OAI: oai:DiVA.org:kth-181590DiVA: diva2:911370
Conference
21 September 2014 through 25 September 2014
Note

QC 20160311

Available from: 2016-03-11 Created: 2016-02-02 Last updated: 2016-03-11Bibliographically approved

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Nee, Hans-Peter
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