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Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, 834-837 p.Article in journal (Refereed) Published
Resource type
Text
Abstract [en]

Ion implantation in silicon carbide (SiC) induces defects during the process. Implantation free processing can eliminate these problems. The junction termination extension (JTE) can also be formed without ion implantation in SiC bipolar junction transistor (BJT) using a well-controlled etching into the epitaxial base layer. The fixed charges at the SiC/SiO2 interface modify the effective dose of the JTEs, leakage current, and breakdown voltage. In this paper the influence of fixed charges (positive and negative) and also interface trap density at the SiC/SiO2 interface on the breakdown voltage in 4.5 kV 4H-SiC non-ion implanted BJT have been simulated. SiO2 as a surface passivation layer including interface traps and fixed charges has been considered in the analysis. Simulation result shows that the fixed charges influence the breakdown voltage significantly more than the interface traps. It also shows that the positive fixed charges reduce the breakdown voltage more than the negative fixed charges. The combination of interface traps and fixed charges must be considered when optimizing the breakdown voltage.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. Vol. 821-823, 834-837 p.
Keyword [en]
Bipolar junction transistor (BJT), Fixed charges, Implantation free, Interface traps, Junction termination extension (JTE), Oxide, Silicon carbide (SiC), Electric breakdown, Heterojunction bipolar transistors, Ion implantation, Ions, Oxides, Silicon, Silicon carbide, Silicon oxides, Transistors, Interface trap density, Junction termination extensions, Negative fixed charge, SiC bipolar junction transistors, Silicon carbides (SiC), Surface passivation, Bipolar transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
URN: urn:nbn:se:kth:diva-181583DOI: 10.4028/www.scientific.net/MSF.821-823.834Scopus ID: 2-s2.0-84950310667ISBN: 9783038354789 (print)OAI: oai:DiVA.org:kth-181583DiVA: diva2:913007
Conference
ECSCRM 2014
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StandUp
Note

QC 20160318

Available from: 2016-03-18 Created: 2016-02-02 Last updated: 2017-11-30Bibliographically approved

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Salemi2015(369 kB)37 downloads
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Salemi, ArashZetterling, Carl-Mikael

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