Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes
2015 (English)In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, IEEE conference proceedings, 2015, 269-272 p.Conference paper (Refereed)Text
Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (VF = 3.3 V at 100 A/cm2) and low differential on-resistance (RON = 3.4 m.cm2) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τP) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τP is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. 269-272 p.
bipolar degradation-free, breakdown voltage, lifetime enhancement, OCVD, On-axis 4H-SiC, on-resistance, PiN diode, ultrahigh-voltage, VF, Carrier lifetime, Diodes, Electric breakdown, Open circuit voltage, Power electronics, Semiconductor diodes, Semiconductor junctions, Semiconductor quantum wells, Silicon carbide, Bipolar degradations, On-axis, Ultra high voltage, Semiconductor devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-181508DOI: 10.1109/ISPSD.2015.7123441ScopusID: 2-s2.0-84944672884ISBN: 9781479962594OAI: oai:DiVA.org:kth-181508DiVA: diva2:913011
27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, 10 May 2015 through 14 May 2015
QC 201603182016-03-182016-02-022016-03-18Bibliographically approved