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Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
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2015 (English)In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, IEEE conference proceedings, 2015, 269-272 p.Conference paper, Published paper (Refereed)
Resource type
Text
Abstract [en]

Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (VF = 3.3 V at 100 A/cm2) and low differential on-resistance (RON = 3.4 m.cm2) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τP) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τP is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. 269-272 p.
Keyword [en]
bipolar degradation-free, breakdown voltage, lifetime enhancement, OCVD, On-axis 4H-SiC, on-resistance, PiN diode, ultrahigh-voltage, VF, Carrier lifetime, Diodes, Electric breakdown, Open circuit voltage, Power electronics, Semiconductor diodes, Semiconductor junctions, Semiconductor quantum wells, Silicon carbide, Bipolar degradations, On-axis, Ultra high voltage, Semiconductor devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-181508DOI: 10.1109/ISPSD.2015.7123441Scopus ID: 2-s2.0-84944672884ISBN: 9781479962594 (print)OAI: oai:DiVA.org:kth-181508DiVA: diva2:913011
Conference
27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, 10 May 2015 through 14 May 2015
Note

QC 20160318

Available from: 2016-03-18 Created: 2016-02-02 Last updated: 2016-12-09Bibliographically approved
In thesis
1. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
Open this publication in new window or tab >>Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. However, in order to be fully competitive with unipolar devices, it is important to further improve the off-state and on-state characteristics, such as breakdown voltage, leakage current, common-emitter current gain, switching, current density, and ON-resistance.

In order to achieve a high breakdown voltage with a low leakage current, an efficient and easy to fabricate junction edge protection or termination is needed. Among different proposed junction edge protections, a mesa design integrated with junction termination extensions (JTEs) is a powerful approach. In this work, implantation-free 4H-SiC BJTs in two classes of voltage, i.e., 6 kV-class and 15 kV-class with an efficient and optimized implantation-free junction termination (O-JTE) and multiple-shallow-trench junction termination extension (ST-JTE) are designed, fabricated and characterized. These terminations result in high termination efficiency of 92% and 93%, respectively.

The 6 kV-class BJTs shows a maximum current gain of β = 44. A comprehensive study on the geometrical design is done in order to improve the on-state performances. For the first time, new cell geometries (square and hexagon) are presented for the SiC BJTs. The results show a significant improvement of the on-state characteristics because of a better utilization of the base area. At a given current gain, new cell geometries show a 42% higher current density and 21% lower ON-resistance. The results of this study, including an optimized fabrication process, are utilized in the 15 kV-class BJTs where a record high current gain of β = 139 is achieved.

Ultra-high-voltage PiN diodes in two classes of voltage, i.e., 10+ kV using on-axis 4H-SiC and 15 kV-class off-axis 4H-SiC, are presented. O-JTE is utilized for 15 kV-class PiN diodes, while three steps ion-implantation are used to form the JTE in 10+ kV PiN diodes. Carbon implantation followed by high-temperature annealing is also performed for the 10+ kV PiN diodes in order to enhance the lifetime. Both type diodes depict conductivity modulation in the drift layer. No bipolar degradation is observed in 10+ kV PiN diodes.

Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 2017. 126 p.
Series
TRITA-ICT, 2017:02
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-197913 (URN)978-91-7729-183-1 (ISBN)
Public defence
2017-01-20, Ka-Sal C (Sal Sven-Olof Öhrvik), KTH, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
StandUpSwedish Energy AgencySwedish Research Council
Note

QC 20161209

Available from: 2016-12-09 Created: 2016-12-09 Last updated: 2017-01-24Bibliographically approved

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