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Wide temperature range through silicon vias made of Invar and spin-on glass for interposers and MEMS
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0003-1112-3308
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. École Polytechnique Fédérale de Lausanne (EPFL), Switzerland .ORCID iD: 0000-0002-8050-0042
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. Karlsruhe Institute of Technology (KIT), Germany.ORCID iD: 0000-0003-3452-6361
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0001-9552-4234
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2016 (English)In: 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (Mems), Institute of Electrical and Electronics Engineers (IEEE), 2016, 585-588 p., 7421693Conference paper, Published paper (Refereed)
Abstract [en]

Through silicon vias (TSVs) are used e.g. to create electrical connections through MEMS wafers or through silicon interposers used in 2.5D packaging. Currently available technologies do not address situations in which TSVs through unthinned wafers have to withstand large temperature variations. We propose using ferromagnetic Invar metal alloy for this purpose due to its low mismatch in heat induced strain in comparison to silicon. We demonstrate the suitability of a magnetic assembly process for Invar TSV fabrication and the use of spin-on glass as a TSV insulator. We demonstrate TSVs, with contact pads, that tolerate temperature cycling between -50 °C and 190 °C and can withstand elevated temperatures of at least up to 365 °C.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. 585-588 p., 7421693
Series
Proceedings IEEE Micro Electro Mechanical Systems, ISSN 1084-6999 ; 2016
Keyword [en]
TSV, through silicon via, SOG, spin-on glass, Invar, temperature, thermal, interposer, MEMS, expansion, mismatch, CTE, coefficient of thermal expansion
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-183779DOI: 10.1109/MEMSYS.2016.7421693ISI: 000381797300153Scopus ID: 2-s2.0-84970990793ISBN: 978-150901973-1 (print)OAI: oai:DiVA.org:kth-183779DiVA: diva2:913073
Conference
29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016, Shanghai, China, 24 January 2016 through 28 January 2016
Funder
EU, European Research Council, 277879VINNOVA, 324189
Note

QC 20161129

Available from: 2016-03-18 Created: 2016-03-18 Last updated: 2016-11-29Bibliographically approved

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Laakso, Miku

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