A monolithic SiC drive circuit for SiC Power BJTs
2015 (English)In: 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), IEEE , 2015, 285-288 p.Conference paper (Refereed)Text
Silicon Carbide (SiC) is an excellent candidate for high temperature electronics applications, thanks to its wide bandgap. SiC power BJTs are commercially available nowadays, and it is demanding to drive them efficiently. This paper reports on the design, layout specifics, and measurements results of a SiC drive integrated circuit (IC) designed for driving SiC power BJTs. The circuit has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz, and together with a commercial power BJT. The SiC drive IC is shown to have a robust operation over the entire temperature range from 25 degrees C to 500 degrees C.
Place, publisher, year, edition, pages
IEEE , 2015. 285-288 p.
, Proceedings of the International Symposium on Power Semiconductor Devices & ICs, ISSN 1063-6854
Silicon Carbide, Integrated circuits (ICs), Driving Power BJTs
IdentifiersURN: urn:nbn:se:kth:diva-184073DOI: 10.1109/ISPSD.2015.7123445ISI: 000370717300070ScopusID: 2-s2.0-84944675108ISBN: 978-1-4799-6261-7OAI: oai:DiVA.org:kth-184073DiVA: diva2:913898
27th International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 10-14, 2015, Hong Kong, PEOPLES R CHINA
QC 201603222016-03-222016-03-222016-03-22Bibliographically approved