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A monolithic SiC drive circuit for SiC Power BJTs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-3802-7834
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2015 (English)In: 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), IEEE , 2015, p. 285-288Conference paper, Published paper (Refereed)
Resource type
Text
Abstract [en]

Silicon Carbide (SiC) is an excellent candidate for high temperature electronics applications, thanks to its wide bandgap. SiC power BJTs are commercially available nowadays, and it is demanding to drive them efficiently. This paper reports on the design, layout specifics, and measurements results of a SiC drive integrated circuit (IC) designed for driving SiC power BJTs. The circuit has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz, and together with a commercial power BJT. The SiC drive IC is shown to have a robust operation over the entire temperature range from 25 degrees C to 500 degrees C.

Place, publisher, year, edition, pages
IEEE , 2015. p. 285-288
Series
Proceedings of the International Symposium on Power Semiconductor Devices & ICs, ISSN 1063-6854
Keywords [en]
Silicon Carbide, Integrated circuits (ICs), Driving Power BJTs
National Category
Computer Sciences
Identifiers
URN: urn:nbn:se:kth:diva-184073DOI: 10.1109/ISPSD.2015.7123445ISI: 000370717300070Scopus ID: 2-s2.0-84944675108ISBN: 978-1-4799-6261-7 (print)OAI: oai:DiVA.org:kth-184073DiVA, id: diva2:913898
Conference
27th International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 10-14, 2015, Hong Kong, PEOPLES R CHINA
Note

QC 20160322

Available from: 2016-03-22 Created: 2016-03-22 Last updated: 2018-01-10Bibliographically approved

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Rusu, AnaZetterling, Carl-Mikael

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