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INTEGRATION OF DISTRIBUTED GE ISLANDS ONTO SI WAFERS BY ADHESIVE WAFER BONDING AND LOW-TEMPERATURE GE EXFOLIATION
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-9820-8728
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0001-9552-4234
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2015 (English)In: 2015 28TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2015), IEEE , 2015, 280-283 p.Conference paper (Refereed)Text
Abstract [en]

We present a novel and highly efficient wafer-level batch transfer process for populating silicon (Si) wafers with distributed islands of thin single-crystalline germanium (Ge) layers. This is achieved by transferring Ge from a Si wafer containing thick Ge dies to a Si target wafer by adhesive wafer-bonding and subsequent low-temperature Ge exfoliation.

Place, publisher, year, edition, pages
IEEE , 2015. 280-283 p.
Series
, Proceedings IEEE Micro Electro Mechanical Systems, ISSN 1084-6999
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-184061DOI: 10.1109/MEMSYS.2015.7050943ISI: 000370382900075ScopusID: 2-s2.0-84931042657ISBN: 978-1-4799-7955-4OAI: oai:DiVA.org:kth-184061DiVA: diva2:914066
Conference
28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), JAN 18-22, 2015, Estoril, PORTUGAL
Note

QC 20160323

Available from: 2016-03-23 Created: 2016-03-22 Last updated: 2016-03-23Bibliographically approved

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Forsberg, FredrikRoxhed, NiclasStemme, GöranNiklaus, Frank
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ReferencesLink to record
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