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High-speed Metal-filling of Through-Silicon Vias (TSVs) by Parallelized Magnetic Assembly of Micro-Wires
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-4867-0391
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. Karlsruhe Institute of Technology (KIT), Germany.ORCID iD: 0000-0003-3452-6361
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-0525-8647
2016 (English)In: 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers (IEEE), 2016, 577-580 p.Conference paper, Published paper (Refereed)
Abstract [en]

This work reports a parallelized magnetic assembly method for scalable and cost-effective through-silicon via (TSV) fabrication. Our fabrication approach achieves high throughput by utilizing multiple magnets below the substrate to assemble TSV structures on many dies in parallel. Experimental results show simultaneous filling of four arrays of TSVs on a single substrate, with 100 via-holes each, in less than 20 seconds. We demonstrate that increasing the degree of parallelization by employing more assembly magnets below the substrate has no negative effect on the TSV filling speed or yield, thus enabling scaled-up TSV fabrication on full wafer-level. This method shows potential for industrial application with an estimated throughput of more than 70 wafers per hour in one single fabrication module. Such a TSV fabrication process could offer shorter processing times as well as higher obtainable aspect ratios compared to conventional TSV filling methods.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. 577-580 p.
Series
Proceedings IEEE Micro Electro Mechanical Systems, ISSN 1084-6999
Keyword [en]
TSV, magnetic assembly
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-184232DOI: 10.1109/MEMSYS.2016.7421691ISI: 000381797300151Scopus ID: 2-s2.0-84971001486ISBN: 978-1-5090-1973-1 (print)OAI: oai:DiVA.org:kth-184232DiVA: diva2:915719
Conference
29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016, Shanghai, China, 24 January 2016 through 28 January 2016
Funder
EU, European Research Council, 277879VINNOVA, 324189
Note

QC 20161019

Available from: 2016-03-30 Created: 2016-03-30 Last updated: 2017-05-11Bibliographically approved

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