High-speed Metal-filling of Through-Silicon Vias (TSVs) by Parallelized Magnetic Assembly of Micro-Wires
2016 (English)Conference paper (Refereed)
This work reports a parallelized magnetic assembly method for scalable and cost-effective through-silicon via (TSV) fabrication. Our fabrication approach achieves high throughput by utilizing multiple magnets below the substrate to assemble TSV structures on many dies in parallel. Experimental results show simultaneous filling of four arrays of TSVs on a single substrate, with 100 via-holes each, in less than 20 seconds. We demonstrate that increasing the degree of parallelization by employing more assembly magnets below the substrate has no negative effect on the TSV filling speed or yield, thus enabling scaled-up TSV fabrication on full wafer-level. This method shows potential for industrial application with an estimated throughput of more than 70 wafers per hour in one single fabrication module. Such a TSV fabrication process could offer shorter processing times as well as higher obtainable aspect ratios compared to conventional TSV filling methods.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2016.
TSV, magnetic assembly
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Electrical Engineering
IdentifiersURN: urn:nbn:se:kth:diva-184232DOI: 10.1109/MEMSYS.2016.7421691OAI: oai:DiVA.org:kth-184232DiVA: diva2:915719
2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)
FunderEU, European Research Council, 277879VINNOVA, 324189
QC 201604192016-03-302016-03-302016-04-19Bibliographically approved