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Junction Barrier Schottky Rectifiers in Silicon Carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2002. , vi, 64 p.
Keyword [en]
silicon carbide, JBS rectifier, Junction Barrier Schottky (JBS), Schottky rectifier, MPS rectifier, power rectifier, punch-through design, power loss, high blocking voltage
Identifiers
URN: urn:nbn:se:kth:diva-3367ISBN: OAI: oai:DiVA.org:kth-3367DiVA: diva2:9159
Public defence
2002-06-07
Note
NR 20140805Available from: 2002-06-05 Created: 2002-06-05Bibliographically approved

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fulltext(1065 kB)16937 downloads
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442f59bd913bd3d3ccc617e0db262bdc6c3863fbd71334b08ac054d43d6d9c3d5716e505
Type fulltextMimetype application/pdf

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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
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  • Other locale
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Output format
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