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Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma-enhanced chemical vapor deposition process
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1992 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 72, no 7, 3220-3222 p.Article in journal (Refereed) Published
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1992. Vol. 72, no 7, 3220-3222 p.
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Nano Technology
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URN: urn:nbn:se:kth:diva-175308DOI: 10.1063/1.351440ScopusID: 2-s2.0-0000153846OAI: oai:DiVA.org:kth-175308DiVA: diva2:918255
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NR 20160411

Available from: 2016-04-11 Created: 2015-10-10 Last updated: 2016-04-11Bibliographically approved

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Dutta, Joydeep
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