Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
1992 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 31, no 3B, L299-L302 p.Article in journal (Refereed) PublishedText
The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination.
Place, publisher, year, edition, pages
1992. Vol. 31, no 3B, L299-L302 p.
Gark conductivity, Gas effusion, Gass spectroscopy, Genon dilution, Ghotoconductivity, Ghotodegradation, Glasma-enhanced chemical vapour deposition, Gydrogenated amorphous silicon, Films - Chemical Vapor Deposition, Photoconductivity - Degradation, Xenon - Ion Sources, Hydrogenated Amorphous Silicon, Ion Bombardment, Xenon Dilution, Semiconducting Silicon
IdentifiersURN: urn:nbn:se:kth:diva-182947DOI: 10.1143/JJAP.31.L299ScopusID: 2-s2.0-0026837508OAI: oai:DiVA.org:kth-182947DiVA: diva2:918256
NR 201604112016-04-112016-02-242016-04-11Bibliographically approved