Crystallization of nanosized silicon powder prepared by plasma-induced clustering reactions
1997 (English)In: AIChE Journal, ISSN 0001-1541, E-ISSN 1547-5905, Vol. 43, no 11 A, 2610-2615 p.Article in journal (Refereed) PublishedText
Nanosized silicon powders were prepared by gas-phase cluster agglomeration reactions in a low-pressure silane plasma. The formation and agglomeration of clusters leading to the growth of primary particles of powder were studied by in-situ techniques including mass spectroscopy and laser light-scattering experiments. These powders, generally amorphous and crystallized in a reducing atmosphere, were studied in detail by Raman spectroscopy and high-resolution electron microscopy, which revealed a very rough surface of as-prepared single powder particles with structures of 1 to 2 nm. Upon 1-h annealing at temperatures between 300 and 600 °C, circular contrast features, 1.5 to 2.5 nm in size, are observed in the amorphous particles, which show medium-range order. A distinct onset of crystallization is observed at 700 °C with structures ranging from very small crystalline ordered regions of 2.5-3.5 nm in size to fast-grown multiple-twinned crystallites. The crystallization behavior is influenced by the clusters that form primary particles. Observed sintering behavior cannot be explained by a classical approach; hence, theoretical models need to be adapted to nanosized powders.
Place, publisher, year, edition, pages
1997. Vol. 43, no 11 A, 2610-2615 p.
Agglomeration, Annealing, Crystal structure, Crystallization, Electron microscopy, Light scattering, Mass spectrometry, Plasma applications, Powder metals, Raman spectroscopy, Semiconducting silicon, Twinning, Plasma induced clustering reactions, Nanostructured materials
IdentifiersURN: urn:nbn:se:kth:diva-182973ScopusID: 2-s2.0-0031341842OAI: oai:DiVA.org:kth-182973DiVA: diva2:918257
New York, NY, United States
NR 201604112016-04-112016-02-242016-04-11Bibliographically approved