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Diode fabricated by layer by layer deposition of semiconductor nanoparticles
Asian Institute of Technology, Thailand.ORCID iD: 0000-0002-0074-3504
2007 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We report the development of a modified polyelectrolyte deposition technique for building multilayer thin films. The quantum dots of zinc sulphide nanoparticles doped with manganese were synthesized by co-precipitation techniques and the nanoparticles were found to consist of crystallites that were estimated to be around 2.2 nm. The modified polyelectrolyte deposition technique has been used for the growth of multifunctional nanoparticulate ZnS thin films and schottky diodes. The Schottky junction device exhibit diode-like behavior and this technique shows promise for large area construction of diodes using wet-chemical synthesis of semiconductor nanoparticles.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2007. Vol. 2007
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-175261DOI: 10.1109/TENCON.2005.301271ISI: 000246608900088Scopus ID: 2-s2.0-34249290735OAI: oai:DiVA.org:kth-175261DiVA: diva2:918270
Conference
TENCON
Note

QC 20160422

Available from: 2016-04-11 Created: 2015-10-10 Last updated: 2016-04-22Bibliographically approved

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CiteExportLink to record
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  • apa
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