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Short-Circuit Protection Circuits for Silicon Carbide Power Transistors
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0003-0570-9599
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-6184-6470
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
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2016 (English)In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, ISSN 0278-0046, Vol. 63, no 4, 1995-2004 p., ITIEDArticle in journal (Refereed) Published
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different siliconcarbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a shortcircuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 ┬Ás were achieved.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2016. Vol. 63, no 4, 1995-2004 p., ITIED
Keyword [en]
BJT Bipolar junction transistor (BJT), Driver circuits, Failure analysis, Fault detection, Fault protection, JFET Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon Carbide (SiC), Wide band gap semiconductors, driver circuits, failure analysis, fault detection, fault protection, junction field-effect transistor (JFET), power MOSFET, semiconductor device reliability, short-circuit current, silicon carbide (SiC), wide-bandgap semiconductors
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-185456DOI: 10.1109/TIE.2015.2506628ISI: 000372645900001ScopusID: 2-s2.0-84963729279OAI: oai:DiVA.org:kth-185456DiVA: diva2:920769
Funder
VINNOVA, 76454
Note

QC 20160419

Available from: 2016-04-19 Created: 2016-04-19 Last updated: 2016-04-19Bibliographically approved

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Sadik, Diane-PerleColmenares, JuanTolstoy, GeorgPeftitsis, DimosthenisRabkowski, JacekNee, Hans-Peter
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IEEE transactions on industrial electronics (1982. Print)
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