4.5-kV 20-mΩ. cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821, 838-841 p.Article in journal (Refereed) [Artistic work] Published
A single-mask junction termination extension withtrench structures is formed to realize a 4.5 kV implantation-free 4H-SiCbipolar junction transistor (BJT). The trench structures are formed on the baselayer with dry etching using a single mask. The electric field distributionalong the structure is controlled by the number and dimensions of the trenches.The electric field is distributed by the trench structures and thus the electricfield crowding at the base and mesa edges is diminished. The design isoptimized in terms of the depth, width, spacing, and number of the trenches toachieve a breakdown voltage (VB) of 4.5 kV, which is 85% of thetheoretical value. Higher efficiency is obtainable with finer lithographicresolution leading to smaller pitch, and higher number and narrower trenches.The specific on-resistance (RON) of 20 mΩ.cm2 is measuredfor the small-area BJT with active area of 0.04 mm2. The BV-RONof the fabricated device is very close to the SiC limit and by far exceeds thebest SiC MOSFETs.
Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2015. Vol. 821, 838-841 p.
Bipolar junction transistor (BJT), High voltage, Silicon carbide (SiC), Trench
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-185457DOI: 10.4028/www.scientific.net/MSF.821-823.838ScopusID: 2-s2.0-84950326986ISBN: 978-303835478-9OAI: oai:DiVA.org:kth-185457DiVA: diva2:920785
European Conference on Silicon Carbide and Related Materials, ECSCRM 2014; Grenoble; France; 21 September 2014 through 25 September 2014
QC 201605232016-04-192016-04-192016-07-14Bibliographically approved