Improved designs of Si-based quantum wells and Schottky diodes for IR detection
2016 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 613, 19-23 p.Article in journal (Refereed) Published
Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 1020 cm− 3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K1/f = 4.7 × 10− 14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future.
Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 613, 19-23 p.
Infrared, Infrared detection, Silicon germanium, Bolometers, Noise measurement
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-185460DOI: 10.1016/j.tsf.2016.02.003ISI: 000381031000003OAI: oai:DiVA.org:kth-185460DiVA: diva2:920821
E-MRS Symposium K on Transport and Photonics in Group IV based Nano-Devices, May, 2015, Lille, France
QC 201609152016-04-192016-04-192016-09-23Bibliographically approved