Change search
ReferencesLink to record
Permanent link

Direct link
Improvements in Realizing 4H-SiC Thermal Neutron Detectors
Show others and affiliations
2016 (English)In: ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY, 2016, 05004Conference paper (Refereed)Text
Abstract [en]

In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Place, publisher, year, edition, pages
2016. 05004
, EPJ Web of Conferences, ISSN 2100-014X ; 106
National Category
Biomaterials Science
URN: urn:nbn:se:kth:diva-185674DOI: 10.1051/epjconf/201610605004ISI: 000372590700056ScopusID: 2-s2.0-84962007642ISBN: 978-2-7598-1929-4OAI: diva2:923237
15th International Symposium on Reactor Dosimetry (ISRD), MAY 18-23, 2014, Aix en Provence, FRANCE

QC 20160426

Available from: 2016-04-26 Created: 2016-04-25 Last updated: 2016-04-26Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Hallén, Anders
By organisation
Integrated Devices and Circuits
Biomaterials Science

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 2 hits
ReferencesLink to record
Permanent link

Direct link