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Improvements in Realizing 4H-SiC Thermal Neutron Detectors
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2016 (English)In: ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY, 2016, 05004Conference paper (Refereed)Text
Abstract [en]

In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Place, publisher, year, edition, pages
2016. 05004
Series
, EPJ Web of Conferences, ISSN 2100-014X ; 106
National Category
Biomaterials Science
Identifiers
URN: urn:nbn:se:kth:diva-185674DOI: 10.1051/epjconf/201610605004ISI: 000372590700056ScopusID: 2-s2.0-84962007642ISBN: 978-2-7598-1929-4OAI: oai:DiVA.org:kth-185674DiVA: diva2:923237
Conference
15th International Symposium on Reactor Dosimetry (ISRD), MAY 18-23, 2014, Aix en Provence, FRANCE
Note

QC 20160426

Available from: 2016-04-26 Created: 2016-04-25 Last updated: 2016-04-26Bibliographically approved

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Hallén, Anders
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Integrated Devices and Circuits
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