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Single-dot absorption spectroscopy and theory of silicon nanocrystals
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.ORCID iD: 0000-0003-2562-0540
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.ORCID iD: 0000-0001-5304-913X
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2016 (English)In: Physical Review B, ISSN 2469-9950, Vol. 93, no 16, 161413Article in journal (Refereed) Published
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Abstract [en]

Photoluminescence excitation measurements have been performed on single, unstrained oxide-embedded Si nanocrystals. Having overcome the challenge of detecting weak emission, we observe four broad peaks in the absorption curve above the optically emitting state. Atomistic calculations of the Si nanocrystal energy levels agree well with the experimental results and allow identification of some of the observed transitions. An analysis of their physical nature reveals that they largely retain the indirect band-gap structure of the bulk material with some intermixing of direct band- gap character at higher energies.

Place, publisher, year, edition, pages
American Physical Society , 2016. Vol. 93, no 16, 161413
Keyword [en]
Quantum Dots, Photoluminescence Spectroscopy, White-Light, P Method, States, Phosphors, Emission, Energy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-185829DOI: 10.1103/PhysRevB.93.161413ISI: 000374951000001Scopus ID: 2-s2.0-84964689318OAI: oai:DiVA.org:kth-185829DiVA: diva2:924296
Funder
Swedish Research Council, VR 2015-04064
Note

QC 20160512

Available from: 2016-04-28 Created: 2016-04-28 Last updated: 2016-06-01Bibliographically approved

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Sychugov, IlyaPevere, FedericoLinnros, Jan

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