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Photothermal Switching Based on Silicon Mach-Zehnder Interferometer Integrated with Light Absorber
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
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2016 (English)In: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 8, no 2, 7456199Article in journal (Refereed) Published
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Abstract [en]

We present an all-optical switch based on photothermal effects in a silicon Mach-Zehnder interferometer (MZI) integrated with a light absorber. The metal-insulator-metal light absorber located near the longer arm of the asymmetric MZI efficiently converts infrared light to heat. Pumped by a continuous-wave 1064-nm laser, the spectral transmittance of the fully etched strip waveguide (half-etched rib waveguide) MZI can be tuned with an efficiency of 38 pm/mW (98.5 pm/mW). Dynamic switching experiments show that the rise/fall time constant of the output probe light is 11.45/10.98 μs (8.25/7.13 μs) for the fully etched (half-etched) MZI.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. Vol. 8, no 2, 7456199
Keyword [en]
Fabrication and charaterization, Integrated nanophotonic systems, Photothermal effect, Silicon nanophotonics, Waveguides
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-187184DOI: 10.1109/JPHOT.2016.2550319ISI: 000388089100050Scopus ID: 2-s2.0-84964692040OAI: oai:DiVA.org:kth-187184DiVA: diva2:929842
Note

QC 20160520

Available from: 2016-05-20 Created: 2016-05-18 Last updated: 2016-12-14Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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  • de-DE
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