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Ultra High Speed InP Heterojunction Bipolar Transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)Doctoral thesis, monograph (Other scientific)
Abstract [en]

This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.

Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm2, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization.HBT’s with a linear doping gradient in the base are forthe first time reported and compared to HBT’s with abandgap graded base. The effect of degenerate base doping issimulated, as well as the base transit time.

Key results include a DHBT with a 215 nm thick collector andan fτ= 280GHz, and fmax=400 GHz. This represents the highest fmaxreported for a mesa HBT. Results also include aDHBT with a 150 nm thick collector and an fτ= 300 GHz, and fmax=280 GHz. The maximum operating current densityhas been increased to above 10 mAµm while maintaining fτand fmax≥ 200 GHz.

A mesa DHBT process with and as much yield and simplicity aspossible has been developed, while maintaining or pushingworld—class performance.

Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2003. , xviii, 162 p.
Keyword [en]
InP HBT carbon high-speed
Identifiers
URN: urn:nbn:se:kth:diva-3527ISBN: 91-7283-496-X (print)OAI: oai:DiVA.org:kth-3527DiVA: diva2:9342
Public defence
2003-05-26
Note
NR 20140805Available from: 2003-05-16 Created: 2003-05-16Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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  • ieee
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