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High-Yield Growth and Characterization of < 100 > InP p-n Diode Nanowires
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2016 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 16, no 5, 3071-3077 p.Article in journal (Refereed) PublishedText
Abstract [en]

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of (100) nanowires is crucial for integration. Here, we discuss doping of single-crystalline < 100 > nanowires, and the structural and optoelectronic properties of p-n junctions based on < 100 > InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a < 100 >-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2016. Vol. 16, no 5, 3071-3077 p.
Keyword [en]
Nanowire, indium phosphide, 100, diode, p-n junction
National Category
Chemical Engineering
URN: urn:nbn:se:kth:diva-188073DOI: 10.1021/acs.nanolett.6b00203ISI: 000375889700027OAI: diva2:936147

QC 20160613

Available from: 2016-06-13 Created: 2016-06-03 Last updated: 2016-06-13Bibliographically approved

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Zwiller, Val
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Quantum Electronics and Quantum Optics, QEO
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