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Graphene-based piezoresistive pressure sensing for uniaxial and biaxial strains
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-0525-8647
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0003-3452-6361
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2014 (English)In: 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers (IEEE), 2014Conference paper, Published paper (Refereed)
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Text
Abstract [en]

The piezoresistive effect in graphene has been experimentally demonstrated for both uniaxial and biaxial strains. For uniaxial strain, rectangular membranes were measured while circular membranes provided biaxial strain. Gauge factors have also been extracted and compared to previous literature as well as simulations.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2014.
Keyword [en]
Nanoelectronics, Strain, Biaxial strains, Circular membranes, Gauge factors, Piezo-resistive, Piezoresistive effects, Pressure sensing, Uni-axial strains, Graphene
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-186805DOI: 10.1109/SNW.2014.7348615Scopus ID: 2-s2.0-84963853586ISBN: 9781479956777 (print)OAI: oai:DiVA.org:kth-186805DiVA: diva2:937471
Conference
Silicon Nanoelectronics Workshop, SNW 2014, 8 June 2014 through 9 June 2014
Note

QC 20160615

Available from: 2016-06-15 Created: 2016-05-13 Last updated: 2016-06-15Bibliographically approved

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CiteExportLink to record
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Citation style
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  • vancouver
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Language
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Output format
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