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Step tunneling-enhanced hot-electron injection in vertical graphene base transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2015 (English)In: European Solid-State Device Research Conference, Editions Frontieres , 2015, 198-201 p.Conference paper (Refereed)Text
Abstract [en]

This paper presents promising current-voltage characteristics of semiconductor-insulator-graphene tunnel diodes as the hot-electron injection unit in graphene base transistors (GBTs). We propose that by using a bilayer tunnel barrier one can effectively suppress the defect mediated carrier transport while enhancing the hot-electron emission through Fowler-Nordheim tunneling (FNT) and step tunneling (ST). A stack of TmSiO/TiO2 (1 nm/ 5.5 nm) is sandwiched between a highly doped Si substrate and a single layer graphene (SLG) as the electrodes. This tunnel diode exhibits high current with large nonlinearity suitable for the application in GBTs.

Place, publisher, year, edition, pages
Editions Frontieres , 2015. 198-201 p.
Keyword [en]
bilayer, dielectric, graphene, hot-electron, transistor, tunneling, vertical, Current voltage characteristics, Dielectric materials, Electron emission, Electron injection, Electron tunneling, Electrons, Graphene transistors, Hot electrons, Semiconductor diodes, Solid state devices, Transistors, Tunnel diodes, Bi-layer, High currents, Si substrates, Single layer, Tunnel barrier
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-186831DOI: 10.1109/ESSDERC.2015.7324749ISI: 000376615800047ScopusID: 2-s2.0-84959334794ISBN: 9781467371339OAI: oai:DiVA.org:kth-186831DiVA: diva2:937519
Conference
45th European Solid-State Device Research Conference, ESSDERC 2015, 14 September 2015 through 18 September 2015
Note

QC 20160615

Available from: 2016-06-15 Created: 2016-05-13 Last updated: 2016-06-20Bibliographically approved

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Vaziri, SamSmith, Anderson DavidDentoni Litta, EugenioLemme, MaxÖstling, Mikael
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