Step tunneling-enhanced hot-electron injection in vertical graphene base transistors
2015 (English)In: European Solid-State Device Research Conference, Editions Frontieres , 2015, 198-201 p.Conference paper (Refereed)Text
This paper presents promising current-voltage characteristics of semiconductor-insulator-graphene tunnel diodes as the hot-electron injection unit in graphene base transistors (GBTs). We propose that by using a bilayer tunnel barrier one can effectively suppress the defect mediated carrier transport while enhancing the hot-electron emission through Fowler-Nordheim tunneling (FNT) and step tunneling (ST). A stack of TmSiO/TiO2 (1 nm/ 5.5 nm) is sandwiched between a highly doped Si substrate and a single layer graphene (SLG) as the electrodes. This tunnel diode exhibits high current with large nonlinearity suitable for the application in GBTs.
Place, publisher, year, edition, pages
Editions Frontieres , 2015. 198-201 p.
bilayer, dielectric, graphene, hot-electron, transistor, tunneling, vertical, Current voltage characteristics, Dielectric materials, Electron emission, Electron injection, Electron tunneling, Electrons, Graphene transistors, Hot electrons, Semiconductor diodes, Solid state devices, Transistors, Tunnel diodes, Bi-layer, High currents, Si substrates, Single layer, Tunnel barrier
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-186831DOI: 10.1109/ESSDERC.2015.7324749ISI: 000376615800047ScopusID: 2-s2.0-84959334794ISBN: 9781467371339OAI: oai:DiVA.org:kth-186831DiVA: diva2:937519
45th European Solid-State Device Research Conference, ESSDERC 2015, 14 September 2015 through 18 September 2015
QC 201606152016-06-152016-05-132016-06-20Bibliographically approved