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Wafer-scale epitaxial graphene on SiC for sensing applications
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM. (Functional Materials Division)
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2015 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, SPIE - International Society for Optical Engineering, 2015Conference paper (Refereed)Text
Abstract [en]

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'™'™ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene'™s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer'™s method were also fabricated for comparison. © 2015 SPIE.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2015.
Keyword [en]
Graphene, sensors, SiC, wafer-scale, Cost effectiveness, Cyclic voltammetry, Glucose, Glucose sensors, Interfaces (materials), Nanosensors, Silicon carbide, Silicon wafers, Epitaxial graphene, Graphene-based sensors, Natural interfaces, Optical and electrical properties, Proof of concept, Sensing applications, Sublimation process, Wafer scale
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-187530DOI: 10.1117/12.2202440ScopusID: 2-s2.0-84959878067ISBN: 9781628418903OAI: oai:DiVA.org:kth-187530DiVA: diva2:937924
Conference
SPIE Micro+Nano Materials, Devices, and Applications Symposium, 6 December 2015 through 9 December 2015
Note

QC 20160616

Available from: 2016-06-16 Created: 2016-05-25 Last updated: 2016-06-16Bibliographically approved

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Zhao, YichenToprak, Muhammet S.
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