Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Design, Fabrication and Analysis of InP-InGaAsP Traveling-Wave Electro-Absorption Modulators
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2003 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

External modulators will become key components in fiberoptical communica- tion systems operating at 40Gbit/s andhigher bitrates. Semiconductor electro- absorption (EA)modulators are promising candidates because of their high-speed potential, and their process compatibility with thecorresponding semi- conductor laser light sources. Thetraveling-wave (TW) electrode concept for electro-opticmodulators has been used for a long time in order to resolvethe con°ict between high modulation depth and highmodulation bandwidth. Re- cently, it has been adopted for EAmodulators as well.

This thesis presents the work carried out on design,fabrication and analysis of traveling-wave EA modulators(TWEAM) based on InP-InGaAsP. The lengths of TWEAM arecomparable to the lengths of their lumped counterparts. Theexperimental data of this work were analyzed in order show thatthe traveling- wave concept results in better performance evenfor short EA modulators. One key issue is the impedancematching. The low intrinsic characteristic modulator impedancehas to be matched with a corresponding load. In this case, theTW con figuration leads to a much higher bandwidth than for alumped EA modulator with the same length and the same connectedload.

An InP process was developed allowing the fabrication ofTWEAM with integrated termination resistors. Experimentalmicrowave properties were ob- tained for different TWEAMgeometries. It is reported on long TWEAM that showstate-of-the-art bandwidth. A 450&#956m long TWEAM reached43GHz, and 67GHz (beyond characterization limit) were indicatedfor a 250&#956m device. The experimental results onmicrowave properties were compared to full-wave, and circuitmodel simulations. The analysis reveals an impedance bandwidthtrade- off for the cross sectional electrode configuration.

Results of a new high-impedance design in form of asegmented TWEAM are presented. The devices were processedwithin the frame of this work and record bandwidth performanceis reported. At 50&#937­ impedance a bandwidth in the90GHz region was indicated.

Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2003. , xii, 73 p.
Series
Trita-MVT, ISSN 0348-4467 ; 2003:5
Keyword [en]
fiber-optic communication, modulator, electroabsorption, traveling-wave, InP, broad-band modulation
Identifiers
URN: urn:nbn:se:kth:diva-3566ISBN: 91-7283-543-5 (print)OAI: oai:DiVA.org:kth-3566DiVA: diva2:9385
Public defence
2003-06-12
Note
NR 20140805Available from: 2003-06-26 Created: 2003-06-26Bibliographically approved

Open Access in DiVA

fulltext(926 kB)6040 downloads
File information
File name FULLTEXT01.pdfFile size 926 kBChecksum MD5
ce4fcc6fe073f4b99b8614c87dacbf2206b77d1e22c3169fa19210be37b96b26eb397859
Type fulltextMimetype application/pdf

By organisation
Microelectronics and Information Technology, IMIT

Search outside of DiVA

GoogleGoogle Scholar
Total: 6040 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 640 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf