Silicon Carbide Fully-Differential Amplifier Characterized up to 500 °C
2016 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 63, no 6, 2242-2247 p.Article in journal (Refereed) Published
This paper presents a monolithic fully-differentialamplifier implemented in a low-voltage 4H-SiC BJT technology.The circuit has been designed considering the variation of deviceparameters over a large temperature range. A base-currentcompensation technique has been applied to overcome the lowinput-resistance of the amplifier. The bare chip of the amplifierhas been measured from 27 ºC to 500 ºC using a hot-chuck probestation. Its open-loop gain is 58 dB at 27 ºC, and monotonicallydecreases to 37 dB at 500 ºC. Its closed-loop gain reduction isaround 5 dB over the investigated temperature range. Thegain-bandwidth product drops from 2.8 MHz at 27 ºC to 1.3 MHzat 500 ºC with 470 pF off-chip compensation capacitors. A lowtotal-harmonic-distortion of -58.4 dB at 27 ºC and -46.9 dB at 500ºC is achieved due to the fully-differential implementation. A lowinput offset voltage of 0.5 mV at 27 ºC and 6.9 mV at 500 ºC isachieved without calibration. The relative high linearity and lowoffset demonstrate the potential of this technology to be furtherinvestigated for front-end sensor circuits in high-temperatureapplications.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. Vol. 63, no 6, 2242-2247 p.
SiC, high temperature, fully differential integrated amplifier
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-189765DOI: 10.1109/TED.2016.2549062ISI: 000378592800002ScopusID: 2-s2.0-84963568209OAI: oai:DiVA.org:kth-189765DiVA: diva2:948832
FunderSwedish Foundation for Strategic Research , RE10-0011
QC 201607182016-07-132016-07-132016-07-26Bibliographically approved