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Dielectric function and double absorption onset of monoclinic Cu2SnS3: Origin of experimental features explained by first-principles calculations
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
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2016 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 154, 121-129 p.Article in journal (Refereed) PublishedText
Abstract [en]

In this work, we determine experimentally the dielectric function of monoclinic Cu2SnS3 (CTS) by spectroscopic ellipsometry from 0.7 to 5.9 eV. An experimental approach is proposed to overcome the challenges of extracting the dielectric function of Cu2SnS3 when grown on a glass/Mo substrate, as relevant for photovoltaic applications. The ellipsometry measurement reveals a double absorption onset at 0.91 eV and 0.99 eV. Importantly, we demonstrate that calculation within the density functional theory (DFT) confirms this double onset only when a very dense k-mesh is used to reveal fine details in the electronic structure, and this can explain why it has not been reported in earlier calculated spectra. We can now show that the double onset originates from optical transitions at the Gamma-point from three energetically close-lying valence bands to a single conduction band. Thus, structural imperfection, like secondary phases, is not needed to explain such an absorption spectrum. Finally, we show that the absorption coefficient of CTS is particularly large in the near-band gap spectral region when compared to similar photovoltaic materials. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 154, 121-129 p.
Keyword [en]
CTS, Cu2SnS3, Optical properties, Band gap, Ellipsometry
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-189906DOI: 10.1016/j.solmat.2016.04.028ISI: 000378569600016ScopusID: 2-s2.0-84969542894OAI: oai:DiVA.org:kth-189906DiVA: diva2:951334
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QC 20160808

Available from: 2016-08-08 Created: 2016-07-25 Last updated: 2016-08-08Bibliographically approved

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