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500-750 GHz submillimeter-wave MEMS waveguide switch
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)ORCID iD: 0000-0002-8264-3231
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2016 (English)Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a 500-750 GHz waveguide based single-pole single-throw (SPST) switch achieving a 40% bandwidth. It is the first ever RF MEMS switch reported to be operating above 220 GHz. The switch is based on a MEMS-reconfigurable surface which can block the wave propagation in the waveguide by short-circuiting the electrical field lines of the TE10 mode. The switch is designed for optimized isolation in the blocking state and for optimized insertion loss in the non-blocking state. The measurement results of the first prototypes show better than 15 dB isolation in the blocking state and better than 3 dB insertion loss in the non-blocking state for 500-750 GHz. The higher insertion loss is mainly attributed to the insufficient metal thickness and surface roughness on the waveguide sidewalls. Two switch designs with different number of blocking elements are fabricated and compared. The overall switch bandwidth is limited by the waveguide only and not by the switch technology itself.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016.
Keyword [en]
Micromachined waveguide, RF MEMS, THz, submillimeter-wave, switch, terahertz, waveguide switch
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-191016Scopus ID: 2-s2.0-84984950666OAI: oai:DiVA.org:kth-191016DiVA: diva2:954427
Conference
2016 IEEE MTT-S International Microwave Symposium (IMS)
Note

QC 20160824

Available from: 2016-08-22 Created: 2016-08-22 Last updated: 2016-12-06Bibliographically approved

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Shah, UmerFrid, HenrikOberhammer, Joachim
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CiteExportLink to record
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Citation style
  • apa
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