A Comparison of Power Factor in N and P-Type SiGe Nanowires for Thermoelectric Applications
2016 (English)In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899Article in journal (Refereed) Accepted
This work presents the thermoelectric properties of n- and p-type doped SiGe nanowires and shows the potential to generate electricity from heat difference over nanowires. The Si0.74Ge0.26 layers were grown by reduced pressure chemical vapor deposition technique on silicon on insulator and were condensed to the final Si0.53Ge0.47 layer with thickness of 52 nm. The nanowires were formed by using sidewall transfer lithography (STL) technique at a targeted width of 60 nm. A high volume of NWs is produced per wafer in a time efficient manner and with high quality using this technique. The results demonstrate high Seebeck coefficient in both n- and p-types SiGe nanowires. N-type SiGe nanowires show significantly higher Seebeck coefficient and power factor compared to p-type SiGe nanowires near room temperature. These results are promising and the devised STL technique may pave the way to apply a Si compatible process for manufacturing SiGe-based TE modules for industrial applications.
Place, publisher, year, edition, pages
IdentifiersURN: urn:nbn:se:kth:diva-192090DOI: 10.1166/jnn.2016.13728OAI: oai:DiVA.org:kth-192090DiVA: diva2:957999
Qc 201609072016-09-052016-09-052016-09-07Bibliographically approved