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Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2016 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 613, 38-42 p.Article in journal (Refereed) Published
Abstract [en]

This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layerswas examined by quantifying noise parameter, K-1/f obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16mPa inside and in the interface of the layers.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 613, 38-42 p.
Keyword [en]
Reduced-pressure chemical vapor deposition, Low temperature epitaxy, Silicon germanium, Trisilane, Oxygen contamination, Noise measurement
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-192390DOI: 10.1016/j.tsf.2015.10.001ISI: 000381031000008ScopusID: 2-s2.0-84951831212OAI: oai:DiVA.org:kth-192390DiVA: diva2:969045
Conference
E-MRS Symposium K on Transport and Photonics in Group IV based Nano-Devices, MAY, 2015, Lille, France
Note

QC 20160913

Available from: 2016-09-13 Created: 2016-09-12 Last updated: 2016-09-13Bibliographically approved

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Abedin, AhmadMoeen, MahdiCappetta, CarmineÖstling, MikaelRadamson, Henry H.
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