Experimental characterization of Enhancement ModeGaN power FETs at cryogenic temperatures
(English)Manuscript (preprint) (Other academic)
High power density converters in combination with cryogenic power systems could have a significant effect on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC GaN power FET was evaluated. At -195 °C, an 85 % reduction in on-state resistance, a 16 % increase in threshold voltage, and no major changes in switching characteristics were observed.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-192623OAI: oai:DiVA.org:kth-192623DiVA: diva2:971369
QC 201609212016-09-162016-09-162016-09-21Bibliographically approved