Experimental Evaluation of a 1 kW, Single-Phase, 3-LevelGaN Inverter at Extreme Cold Environments
(English)Manuscript (preprint) (Other academic)
Low temperature of operation of power electronics applications enables higher efficiencies and higher reliability. Moreover, combining lower temperature of operation with rapidly maturing wide-bandgap semiconductors materials, such as gallium-nitride, could facilitate higher power density designs. In this study, the low temperature performance of a 1 kW single phase, 3-level GaN inverter has been evaluated. A 33% reduction in the losses was measured during rated operation at -75 °C. To show the impact of temperature on the power loss breakdown, a comparison of the estimated and measured losses has been performed.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-192624OAI: oai:DiVA.org:kth-192624DiVA: diva2:971370
QC 201609212016-09-162016-09-162016-09-21Bibliographically approved