High Temperature Passive Components for Extreme Environments
(English)Manuscript (preprint) (Other academic)
Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology has been tested up to 300 °C and, two different designs of inductors have been tested up to 600 °C.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-192625OAI: oai:DiVA.org:kth-192625DiVA: diva2:971371
QC 201609212016-09-162016-09-162016-09-21Bibliographically approved