Electrical characteristics of 4H-SiC BJTs at elevated temperatures
2005 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 483-485, 897-900 p.Article in journal (Refereed) Published
The DCI-V characteristics of 4H-SiC BJTs have been studied in the temperature range 25 &DEG; C to 300 &DEG; C. The DC current gain at 300 &DEG; C decreased 56% compared to its value at 25 &DEG; C. Under high power operation, the SiC BJTs were strongly influenced by self-heating, which significantly limits the performance of device. Pulsed measurements were performed and compared to DC measurements to distinguish the effects of self-heating. From DC IN measurements, the junction temperature and thermal resistance were extracted to 102 &DEG; C and 19 &DEG; C/W respectively for a power level of 7.3 W at ambient temperature 25 &DEG; C.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2005. Vol. 483-485, 897-900 p.
4H-SiC, Bipolar junction transistor, Junction temperature, Self-heating
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5368DOI: 10.4028/www.scientific.net/MSF.483-485.897ISI: 000228549600213ScopusID: 2-s2.0-35148894549ISBN: 978-087849963-2OAI: oai:DiVA.org:kth-5368DiVA: diva2:9716
5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004; Bologna; 31 August 2004 through 4 September 2004
QC 201012082006-02-142006-02-142016-05-11Bibliographically approved