Selective release of InP heterostructures from InP substrates
2016 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 34, no 4, 041229Article in journal (Refereed) Published
The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 34, no 4, 041229
Nano Technology Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-192757DOI: 10.1116/1.4958799ISI: 000382207700040ScopusID: 2-s2.0-84978524095OAI: oai:DiVA.org:kth-192757DiVA: diva2:974265
QC 201609262016-09-262016-09-202016-09-26Bibliographically approved