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Selective release of InP heterostructures from InP substrates
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2016 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 34, no 4, 041229Article in journal (Refereed) Published
Abstract [en]

The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 34, no 4, 041229
National Category
Nano Technology Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-192757DOI: 10.1116/1.4958799ISI: 000382207700040Scopus ID: 2-s2.0-84978524095OAI: oai:DiVA.org:kth-192757DiVA: diva2:974265
Note

QC 20160926

Available from: 2016-09-26 Created: 2016-09-20 Last updated: 2017-11-21Bibliographically approved

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Berggren, JesperHammar, Mattias
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