Change search
ReferencesLink to record
Permanent link

Direct link
Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
Show others and affiliations
2016 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 163, 49-54 p.Article in journal (Refereed) Published
Abstract [en]

In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si1-xGex (0.35 <= x <= 0.40) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the source/drain of the transistors. The epi-quality, layer profile and strain amount of the selectively grown SiGe layers were also investigated by means of various characterizations. A series of prebaking experiments were performed for temperatures ranging from 740 to 825 degrees C in order to in situ clean the Si fins prior to the epitaxy. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damages to the shape of Si fins but to remove the native oxide effectively which is essential for high epitaxial quality. The Ge content in SiGe layers on Si fins was determined from the strain measured directly by reciprocal space mappings using synchrotron radiation. Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an AID approach, decent growth rate, low resistivity and excellent gap filling capability of W in pretty high aspect-ratio gate trench was realized. The as-fabricated FinFETs demonstrated decent electrical characteristics.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 163, 49-54 p.
Keyword [en]
FinFET, SiGe selective epitaxy, RPCVD, High-k & metal gate
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-192720DOI: 10.1016/j.mee.2016.06.002ISI: 000381837300008OAI: diva2:974492

QC 20160926

Available from: 2016-09-26 Created: 2016-09-20 Last updated: 2016-09-26Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Radamson, Henry H.
By organisation
Integrated Devices and Circuits
In the same journal
Microelectronic Engineering
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 1 hits
ReferencesLink to record
Permanent link

Direct link