Magnetic switching and magnetoresistance in nanoscale spin tunnel junctions
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 10, 6062-6065 p.Article in journal (Refereed) Published
Co/AlOx/Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by similar to10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurements show a strong dependence on the device geometry. We find that it is necessary to form tunnel junctions with electrode width similar to70 nm for the magnetic switching at the tunnel junction to be clean and single domain like.
Place, publisher, year, edition, pages
2002. Vol. 92, no 10, 6062-6065 p.
IdentifiersURN: urn:nbn:se:kth:diva-5415DOI: 10.1063/1.1515099ISI: 000178987200074OAI: oai:DiVA.org:kth-5415DiVA: diva2:9776
QC 201009242006-03-082006-03-082010-09-24Bibliographically approved