Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain
2005 (English)In: Noise and Fluctuations, 2005, 307-310 p.Conference paper (Refereed)
Thelow-frequency noise in buried SiGe channel pMOSFETs fabricated on ultra-thinbody silicon-on-insulator (SOI) substrates is investigated. The total thickness ofthe Si/SiGe/Si body structure, which is fully depleted (FD), is20 nm. The low-frequency noise properties are compared with FDSOI pMOSFETs with a 20 nm Si body. The effectof the Ni-silicide used in the Source/Drain were also studied,especially the case of Schottky-Barrier (SB) MOSFETs when the Ni-silicideis formed at the edges of the channel.
Place, publisher, year, edition, pages
2005. 307-310 p.
, AIP CONFERENCE PROCEEDINGS, ISSN 0094-243X
1/f noise, low-frequency noise, SiGe, silicon-on-insulator (SOI), fully depleted (FD), Schottky-Barrier (SB), MOSFETs
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5497DOI: 10.1063/1.2036756ISI: 000232217300070ScopusID: 2-s2.0-33749498434OAI: oai:DiVA.org:kth-5497DiVA: diva2:9882
18th International Conference on Noise and Fluctuations Salamanca, SPAIN, SEP 19-23, 2005
QC 201009282006-03-212006-03-212011-10-12Bibliographically approved