Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-κ gate dielectrics and TiN gate
2006 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 53, no 4, 836-846 p.Article in journal (Refereed) Published
Low-frequency noise and hole mobility are studied in Si and SiGe surface channel pMOSFETs with various types of high-kappa dielectric stacks (Al2O3, Al2O3/HfAlOx/Al2O3 and Al2O3/HfO2/Al2O3) and TiN as gate electrode material. Comparisons are made with poly-SiGe-gated pMOSFETs as well as P0lY-Si/SiO2/Si references. The choice of channel material (strained SiGe or Si), gate material (TiN or poly-SiGe), and high-kappa material (Al2O3, HfO2, HfAlOx) is discussed in terms of mobility and low-frequency noise. A TiN gate in combination with a surface SiGe channel is advantageous both for enhanced mobility and low 1/f noise. The dominant sources of carrier scattering are identified by analyzing the mobility measured at elevated temperatures. The 1/f noise is studied from subthreshold to strong inversion conditions and at different substrate biases. The mobility fluctuation noise model and the number fluctuation noise model are both used to investigate the 1/f-noise origin.
Place, publisher, year, edition, pages
2006. Vol. 53, no 4, 836-846 p.
1/f noise, high-K dielectrics, low-frequency noise, metal gate, MOSFETs, SiGe, field-effect transistors, surface channel pmosfets, charge-pumping method, 1/f noise, cmos devices, mos devices, mosfets, stack, fluctuations, hfo2/al2o3
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5498DOI: 10.1109/TED.2006.870276ISI: 000236473500035ScopusID: 2-s2.0-33645768992OAI: oai:DiVA.org:kth-5498DiVA: diva2:9883
QC 201009282006-03-212006-03-212011-09-30Bibliographically approved