Noise in Si and SiGe MOSFETs with high-k gate dielectrics
2005 (English)In: Noise and Fluctuations / [ed] Gonzalez, T; Mateos, J; Pardo, D, 2005, 225-230 p.Conference paper (Refereed)
This paper presents an overview of previous work and new insights on noise in Si-based MOSFETs with high-k gate dielectrics. Results for Al2O3, HfO2, HfAlOx and composite structures of these materials will be reported and compared. Incorporation of strained SiGe in high-k pMOSFETs in order to enhance hole mobility will be discussed in terms of low-frequency noise. A comparison will be made between devices with a surface Si channel, a surface SiGe channel and a buried SiGe channel. The influence of the gate electrode material and presence of a thin interfacial layer will be investigated. We will discuss noise modeling and highlight important differences compared to CMOS devices with standard gate oxide. Finally, we will discuss possible ways to reduce the 1/f noise in high-k MOSFETs. A noise reduction by a factor of two is obtained by forward biasing the substrate.
Place, publisher, year, edition, pages
2005. 225-230 p.
, AIP CONFERENCE PROCEEDINGS, ISSN 0094-243X
1/f noise, low-frequency noise, high-k dielectrics, MOSFETs, metal-gate, SiGe
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-5502DOI: 10.1063/1.2036737ISI: 000232217300051ScopusID: 2-s2.0-33749458613ISBN: 0-7354-0267-1OAI: oai:DiVA.org:kth-5502DiVA: diva2:9887
18th International Conference on Noise and Fluctuations. Salamanca, SPAIN. SEP 19-23, 2005
QC 20100928 QC 201110142006-03-212006-03-212011-10-14Bibliographically approved