Change search
Refine search result
1 - 35 of 35
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1. Agate, B.
    et al.
    Rafailov, E. U.
    Sibbett, W.
    Saltiel, S. M.
    Koynov, K.
    Tiihonen, Mikael
    KTH, Superseded Departments, Physics.
    Wang, Shunhua
    KTH, Superseded Departments, Physics.
    Laurell, Fredrik
    KTH, Superseded Departments, Physics.
    Battle, P.
    Fry, T.
    Roberts, T.
    Noonan, E.
    Portable ultrafast blue light sources designed with frequency doubling in KTP and KNbO32004In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 10, no 6, p. 1268-1276Article in journal (Refereed)
    Abstract [en]

    We demonstrate an effective means of achieving compact, truly portable, and entirely self-contained ultrafast blue light sources. Using a variety of nonlinear media to achieve simple second-harmonic generation of a femtosecond Cr:LiSAF laser, we investigate the relative merits of aperiodically poled bulk and waveguide nonlinear crystals in comparison to periodically poled structures. Such a compact and convenient source of ultrashort laser pulses in the blue spectral region could be of great interest for on-site applications spanning a host of disciplines, such as biomedical imaging, optical micromanipulation, and high-resolution spectroscopy.

  • 2. Attwood, D T
    et al.
    Hertz, Hans
    KTH, School of Engineering Sciences (SCI), Applied Physics, Biomedical and X-ray Physics.
    Midorikawa, K
    Obara, M
    Introduction to the issue on short wavelength and EUV lasers2004In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 10, no 6, p. 1241-1243Article in journal (Other academic)
  • 3. Broeke, Ronald G.
    et al.
    Cao, Jin
    Ji, Chen
    Seo, Sang-Woo
    Du, Yixue
    Fontaine, Nick K.
    Baek, Jong-Hwa
    Yan, John
    Soares, Francisco M.
    Olsson, Fredrik
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Pham, Anh-Vu H.
    Sheam, Michael
    Scherer, Axel
    Yoo, S. J. Ben
    Optical-CDMA in InP2007In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 13, no 5, p. 1497-1507Article in journal (Refereed)
    Abstract [en]

    This paper describes the InP platforms for photonic integration and the development on these platforms of an optical code division multiple access (O-CDMA) system for local area networks. We demonstrate three building blocks of this system: an optical pulse source, an encoder/decoder pair, and a threshold detector. The optical pulse source consists of an integrated colliding pulse-mode laser with nearly transform-limited 10 Gb/s pulses and optical injection locking to an external clock for synchronization. The encoder/decoder pair is based on arrayed waveguide gratings. Bit-error-rate measurements involving six users at 10 Gb/s showed error-free transmission, while O-CDMA codes were calibrated using frequency resolved optical gating. For threshold detection after the decoder, we compared two Mach-Zehnder interferometer (MZI)-based optical thresholding schemes and present results on a new type of electroabsorber-based MZI.

  • 4.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Stoltz, Bjorn
    Driad, Rachid
    Makon, Robert Elvis
    Hurm, Volker
    Steffan, Andreas Gerhard
    100 Gb/s ETDM Transmitter Module2010In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 16, no 5, p. 1321-1327Article in journal (Refereed)
    Abstract [en]

    Components of a 100 Gb/s transmitter with electrical time-division multiplexing are presented as following: electrical multiplexer, driver amplifier, and large-bandwidth distributed feedback-traveling-wave electro-absorption modulator module. The performance of the parts of the transmitter, as well as the complete chain, is investigated for data operation and transmission in future 100 Gb/s Ethernet (100GbE). Clearly open eye diagrams at 100 Gb/s are demonstrated together with data transmission over 300 m long standard single mode fiber link.

  • 5.
    Chen, Biao
    et al.
    Centre for Optical and Electromagnetic Research, Joint Laboratory of Optical Communications, Zhejiang University, Hangzhou 310027, China.
    Chen, Jiajia
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    He, Sailing
    KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.
    Efficient and fine scheduling algorithm for bandwidth allocation in Ethernet passive optical networks2006In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 12, no 4, p. 653-660Article in journal (Refereed)
    Abstract [en]

    A novel fine scheduling algorithm is introduced for upstream bandwidth allocation in an Ethernet-based passive optical network. This scheduling algorithm consists of an inter optical network unit (ONU) scheduler at the optical line terminal (OLT) and an intra-ONU scheduler at each ONU. In the inter-ONU scheduling, a novel GATE/REPORT approach is introduced to eliminate the unused remainders without transmission delay and maximize the utilization of bandwidth. Our novel intra-ONU scheduler gives fair bandwidth allocation to the queues of different priorities for each user in a hierarchical and decentralized way. Numerical results have shown that our overall scheduling algorithm can fulfill various requirements of delay and throughput for the transmission of multimedia traffic for each end user..

  • 6.
    Dai, Daoxin
    et al.
    KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.
    He, Jian
    KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.
    He, Sailing
    Elimination of multimode effects in a silicon-on-insulator etched diffraction grating demultiplexer with bi-level taper structure2005In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 11, no 2, p. 439-443Article in journal (Refereed)
    Abstract [en]

     Multimode effects in the free propagation region (FPR) of an etched diffraction grating (EDG) demultiplexer based on silicon-on-insulator are analyzed. The insertion loss and the crosstalk increase due to these undesired multimode effects. A bi-level taper structure between the FPR and the input/output waveguides is proposed. It is shown that such a taper structure can reduce the multimode effects to an almost negligible level. At the same time, the 3-dB passband width is enlarged by increasing the rib width. No additional fabrication process is needed for an EDG with such a design.

  • 7. Dai, Daoxin
    et al.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Ultrasmall overlapped arrayed-waveguide grating, based on Si nanowire waveguides for dense wavelength division demultiplexing2006In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 12, no 6, p. 1301-1305Article in journal (Refereed)
  • 8. Eichhorn, Marc
    et al.
    Pollnau, Markus
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Spectroscopic Foundations of Lasers: Spontaneous Emission Into a Resonator Mode2015In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 21, no 1, p. 9000216-Article in journal (Refereed)
    Abstract [en]

    We review the physics underlying the process of spontaneous emission, with a special focus on spontaneous emission into a resonator mode. We define the mode volume, verify the fundamental modal dimensions, present the spectral mode profile, the coherence time, the Q-factor, the Fuchtbauer-Ladenburg equation, and the Purcell factor, and discuss their influence on different types of lasers. We obtain the relation between peak emission cross section, radiative lifetime, and emission linewidth. By interpreting spontaneous emission as stimulated emission driven by vacuum fluctuations, we derive the spontaneous-emission rate into a resonator mode and establish physical expressions for the fractions of spontaneous emission and total decay from the upper laser level into this mode. Furthermore, we discuss coupling of the atomic system with the coherent field inside a lasing resonator mode, resulting in the formation of a Mollow triplet, and demonstrate that it leads to a reduction of the spontaneous-emission rate by a factor of 2.

  • 9.
    Errando-Herranz, Carlos
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Intelligenta system, Micro and Nanosystems.
    Takabayashi, A. Y.
    Edinger, Pierre
    KTH, School of Electrical Engineering and Computer Science (EECS), Intelligenta system, Micro and Nanosystems.
    Sattari, H.
    Gylfason, Kristinn B.
    KTH, School of Electrical Engineering and Computer Science (EECS), Intelligenta system, Micro and Nanosystems.
    Quack, N.
    MEMS for Photonic Integrated Circuits2020In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 26, no 2, p. 1-16Article in journal (Refereed)
    Abstract [en]

    The field of microelectromechanical systems (MEMS) for photonic integrated circuits (PICs) is reviewed. This field leverages mechanics at the nanometer to micrometer scale to improve existing components and introduce novel functionalities in PICs. This review covers the MEMS actuation principles and the mechanical tuning mechanisms for integrated photonics. The state of the art of MEMS tunable components in PICs is quantitatively reviewed and critically assessed with respect to suitability for large-scale integration in existing PIC technology platforms. MEMS provide a powerful approach to overcome current limitations in PIC technologies and to enable a new design dimension with a wide range of applications.

  • 10.
    Forsberg, Fredrik
    et al.
    KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
    Lapadatu, Adriana
    Kittilsland, Gjermund
    Martinsen, Stian
    Roxhed, Niclas
    KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
    Fischer, Andreas C.
    Stemme, Goran
    Samel, Bjorn
    Ericsson, Per
    Hoivik, Nils
    Bakke, Thor
    Bring, Martin
    Kvisteroy, Terje
    Ror, Audun
    Niklaus, Frank
    KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
    CMOS-Integrated Si/SiGe Quantum-Well Infrared Microbolometer Focal Plane Arrays Manufactured With Very Large-Scale Heterogeneous 3-D Integration2015In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 21, no 4, p. 1-11Article in journal (Refereed)
    Abstract [en]

    We demonstrate infrared focal plane arrays utilizing monocrystalline silicon/silicon-germanium (Si/SiGe) quantum-well microbolometers that are heterogeneously integrated on top of CMOS-based electronic read-out integrated circuit substrates. The microbolometers are designed to detect light in the long wavelength infrared (LWIR) range from 8 to 14 mu m and are arranged in focal plane arrays consisting of 384 x 288 microbolometer pixels with a pixel pitch of 25 mu m x 25 mu m. Focal plane arrays with two different microbolometer designs have been implemented. The first is a conventional single-layer microbolometer design and the second is an umbrella design in which the microbolometer legs are placed underneath the microbolometer membrane to achieve an improved pixel fill-factor. The infrared focal plane arrays are vacuum packaged using a CMOS compatible wafer bonding and sealing process. The demonstrated heterogeneous 3-D integration and packaging processes are implemented atwafer-level and enable independent optimization of the CMOS-based integrated circuits and the microbolometer materials. All manufacturing is done using standard semiconductor and MEMS processes, thus offering a generic approach for integrating CMOS-electronics with complex miniaturized transducer elements.

  • 11. Gao, S. M.
    et al.
    Zhang, X. Z.
    Li, Z. Q.
    He, Sailing
    Polarization-Independent Wavelength Conversion Using an Angled-Polarization Pump in a Silicon Nanowire Waveguide2010In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 16, no 1, p. 250-256Article in journal (Refereed)
    Abstract [en]

    A proposal for polarization-independent wavelength conversion is presented based on four-wave mixing in a silicon nanowire waveguide using an angled-polarization pump. The principle of polarization independence is introduced and the theoretical model is established. The optimized incident pump polarization angle is obtained for different waveguide geometries, and a polarization-independent bandwidth of 64 nm is achieved with the efficiency fluctuation of less than 1 dB in a 285 nm x 650 nm silicon waveguide. The polarization-independent bandwidth is limited by the larger one of the TE- and TM-mode phase mismatches, and can be enhanced further by carefully tailoring the dispersion characteristics of the silicon nanowire waveguide.

  • 12. Ji, C.
    et al.
    Broeke, R. G.
    Du, Y.
    Cao, J.
    Chubun, N.
    Bjeletich, P.
    Olsson, F.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Welty, R.
    Reinhardt, C.
    Stephan, P. L.
    Yoo, S. J. B.
    Monolithically integrated InP-based photonic chip development for O-CDMA systems2005In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 11, no 1, p. 66-77Article in journal (Refereed)
    Abstract [en]

    This paper discusses photonic integration efforts toward developing an InP-based inonolithically integrated photonic chip for optical code-division multiple-access (O-CDMA) system applications. The chip design includes the colliding pulsed mode (CPM) locked laser, the. Mach-Zehnder interferometer-based threshold detector (MZI), and the monolithic O-CDMA encoder/decoder chip based on array-waveguide-gratings and phase modulator arrays. The compact 4 x I cm monolithic chip can replace a complex and large O-CDMA setup based on bulk optics. The integration technique involves active-passive integration using dry etching, metal organic chemical vapor deposition growth, and lateral hydride vapor phase epitaxy regrowth technologies. The fabricated CPM showed stable 1.54 ps modelocked laser output, the MZI showed excellent O-CDMA threshold detection, and the O-CDMA encoder showed Walsh-code O-CDMA, encoding. Further, the fabricated devices showed excellent planarity, which accelerate our progress toward monolithic integration of O-CDMA systems.

  • 13.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Zhang, Chong
    Julian, Nick
    Bowers, John E.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon2014In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 20, no 4, p. 8201407-Article in journal (Refereed)
    Abstract [en]

    In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO2/Si/SiO2 waveguide necessary to couple light from the gain medium on its top, we adopt a similar to 2 mu m thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (similar to 1. 55 mu m) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip.

  • 14. Korkishko, Y. N.
    et al.
    Fedorov, V. A.
    Laurell, Fredrik
    KTH, Superseded Departments, Physics.
    The SHG-response of different phases in proton exchanged lithium niobate waveguides2000In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 6, no 1, p. 132-142Article in journal (Refereed)
    Abstract [en]

    Reflection second-harmonic generation from the polished waveguide end face is used to investigate the second-order nonlinear optical properties of as-exchanged and annealed proton-exchanged (PE) waveguides in different HxLi1-xNbO3 phases. A detailed correlation is done between the nonlinear properties, the processing conditions, the refractive index changes, and the optical losses of the waveguides. It is found that for the direct PE samples, where the beta(4), beta(3), and beta(1) phases are generated at the surface, the nonlinearity in the guide is strongly reduced by more than 85% of its bulk value, while for waveguides prepared in the beta(2) phase, the nonlinear coefficient is about 55% of the bulk one. A consequence is that the step-like beta(i)-phase PE LiNbO3 waveguides with large refractive index increase are advantageous for efficient SHG in Cherenkov configuration. The nonlinearity, strongly reduced after the initial proton exchange, is found to be restored and even increased after annealing, However, this apparent increase of the nonlinearity is accompanied by a strong degradation of the quality of the second-harmonic generation reflected beam in the region of initial waveguides due to beam scattering. The graded proton exchange technique and dilute melt proton exchange have been shown to produce high-quality waveguides with essentially undergraded nonlinear optical properties. It has been also shown that the nonlinear properties of annealed proton exchanged LiNbO3 waveguides can be effectively recovered by the reverse proton exchange technique, The results obtained are important for the design, fabrication, and optimizing of guided-wave nonlinear optical devices in LiNbO3.

  • 15.
    Lapisa, Martin
    et al.
    KTH, School of Electrical Engineering (EES), Microsystem Technology.
    Stemme, Goran
    KTH, School of Electrical Engineering (EES), Microsystem Technology.
    Niklaus, Frank
    KTH, School of Electrical Engineering (EES), Microsystem Technology.
    Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS2011In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 17, no 3, p. 629-644Article in journal (Refereed)
    Abstract [en]

    Wafer-level heterogeneous integration technologies for microoptoelectromechanical systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical systems (NEMS) enable the combination of dissimilar classes of materials and components into single systems. Thus, high-performance materials and subsystems can be combined in ways that would otherwise not be possible, and thereby forming complex and highly integrated micro-or nanosystems. Examples include the integration of high-performance optical, electrical or mechanical materials such as monocrystalline silicon, graphene or III-V materials with integrated electronic circuits. In this paper the state-of-the-art of wafer-level heterogeneous integration technologies suitable for MOEMS, MEMS, and NEMS devices are reviewed. Various heterogeneous MOEMS, MEMS, and NEMS devices that have been described in literature are presented.

  • 16.
    Li, Qiang
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Wang, Shanshan
    Chen, Yiting
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Yan, Min
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Tong, Limin
    Qiu, Min
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Experimental Demonstration of Plasmon Propagation, Coupling, and Splitting in Silver Nanowire at 1550-nm Wavelength2011In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 17, no 4, p. 1107-1111Article in journal (Refereed)
    Abstract [en]

    We experimentally demonstrate silver-nanowire-based plasmonic devices including the nanowaveguide, the nanocoupler, and the nanosplitter at optical communication wavelength of 1550 nm. The plasmon propagation loss in a 300-nm diameter silver nanowire is measured to be 0.3 dB/mu m and the effective propagation length is 14.5 mu m. This loss is comparatively lower than that at 980 nm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nanocouplers, and nanosplitters, are realized. For the nanocoupler, the experimental results show that the plasmonic modes can be efficiently coupled between two closely positioned nanowires. While for the nanosplitter, the plasmonic mode is split with a power ratio of 2.6:1. These demonstrations experimentally prove the feasibility of extending the operating wavelength of silver-nanowire-based plasmonic devices to current optical communication wavelength with a lower loss, which are thus important steps for potentially utilizing low-loss nanowire-based plasmonic components for photonic integrated circuits.

  • 17. Lindberg, H.
    et al.
    Strassner, Martin
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Gerster, E.
    Bengtsson, J.
    Larsson, A.
    Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers2005In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 11, no 5, p. 1126-1134Article in journal (Refereed)
    Abstract [en]

    We have developed a numerical model for investigating material heating and its effects on the performance of optically pumped InP-based long-wavelength semiconductor disk lasers. Material heating and optical wavefront distortion due to thermal lensing are analyzed, and different approaches to reduce the intrinsic material heating are investigated numerically and experimentally. The results obtained indicate that material heating is significant in such lasers due to the poor thermal properties of the InP-based epitaxial layers of the gain chip. Substrate removal is shown to be an insufficient method to reduce the material heating; instead, crystalline heat spreaders bonded to the gain chip surface provide a convenient way to reduce the thermal impedance. Important parameters for such heat spreaders are a high thermal conductivity and a low thermooptic coefficient (dn / dT). With the use of a synthetic diamond heat spreader, a maximum pump limited output power of 780 mW in a near diffraction limited beam (M-2 < 1.2) was demonstrated at - 33 degrees C and 100 mW at room temperature.

  • 18.
    Lindberg, Robert
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Bogusławski, Jakub
    Laser and Fiber Electronics Group, University of Science and Technology, Wroclaw, Poland.
    Pasternak, Iwona
    Institute of Electronic Materials Technology, Warsaw, Poland.
    Przewłoka, Aleksandra
    Institute of Electronic Materials Technology, Warsaw, Poland.
    Laurell, Fredrik
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Pasiskevicius, Valdas
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Sotor, Jarosław
    Laser and Fiber Electronics Group, University of Science and Technology, Wroclaw, Poland.
    Mapping Mode-Locking Regimes in a Polarization-Maintaining Er-Doped Fiber Laser2018In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 24, no 3, p. 1-9Article in journal (Refereed)
    Abstract [en]

    We present the performance of an all polarization-maintaining Erbium-doped fiber laser mode-locked by a multilayer graphene based saturable absorber. The cavity incorporates a Martinez-type compressor, based on a transmission grating, which allows for continuous tuning of the net cavity dispersion as well as spectral filtering. By adjusting the dispersion and the spectral bandwidth, we could operate the laser in the soliton, the dispersion managed soliton and the absorber-limited pulse regimes. The pulse durations from the laser ranged between 338 fs to 2.1 ps and the laser could be operated at nearly constant output powers in the anomalous and the normal dispersion regimes. We also conducted stability analyses based on dispersive Fourier transform measurements in the different operating regimes. Comparison of the collected spectra reveals that the soliton regime had the best overall stability.

  • 19.
    Liu, Fangfei
    et al.
    State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University.
    Li, Qiang
    State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University.
    Zhang, Ziyang
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Qiu, Min
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Su, Yikai
    State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University.
    Optically Tunable Delay Line in Silicon Microring Resonator Based on Thermal Nonlinear Effect2008In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 14, no 3, p. 706-712Article in journal (Refereed)
    Abstract [en]

    We experimentally demonstrate optically tunable delay fine in a silicon microring resonator with a 20-mu m radius. The delay-tuning mechanism is based on the red shift of the resonance induced by thermal nonlinear effect. We investigate the delay performance of three modulation formats-non-return-to-zero (NRZ), return-to-zero (RZ), and differential phase-shift keying (DPSK) signals at different data rates. Tunable delay is achieved by controlling the power of the continuous-wave (CW) pump with very low tuning threshold, which could be used in microring-resonator-based slow-light structure.

  • 20.
    Lourdudoss, Sebastian
    et al.
    KTH, Superseded Departments, Electronics.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    Hydride vapor phase epitaxy revisited1997In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 3, no 3, p. 749-767Article in journal (Refereed)
  • 21. Park, Hyundai
    et al.
    Sysak, Matthew N.
    Chen, Hui-Wen
    Fang, Alexander W.
    Liang, Di
    Liao, Ling
    Koch, Brian R.
    Bovington, Jock
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Wong, Kristi
    Jacob-Mitos, Matt
    Jones, Richard
    Bowers, John E.
    Device and Integration Technology for Silicon Photonic Transmitters2011In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 17, no 3, p. 671-688Article in journal (Refereed)
    Abstract [en]

    The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.

  • 22. Peacock, Anna
    et al.
    Campling, Joseph
    Runge, Antoine
    Ren, Haonan
    Shen, Li
    Aktas, Ozan
    Horak, Peter
    Healy, Noel
    Gibson, Ursula
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics. Norwegian University of Science and Technology, Norway.
    Ballato, John
    Wavelength conversion and supercontinuum generation in silicon optical fibers2017In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 24, no 3Article in journal (Refereed)
    Abstract [en]

    This paper describes the state of the art in wavelength conversion and supercontinuum generation using glass-clad silicon core optical fibers. Such semiconductor fibers have enjoyed considerable attention due to their intrinsically high third-order nonlinearities, which are markedly higher than in conventional infrared glasses. Results to date from small core silicon fibers fabricated using both the high-pressure chemical vapor deposition technique and the molten core drawing method are presented. Also discussed are directions for continued study and development, including engineering the dispersion and nonlinear properties as well as improved interconnection.

  • 23.
    Peter, Yves-Alain
    et al.
    Ecole Polytech, Montreal, PQ H3T 1J4, Canada..
    He, Sailing
    KTH.
    Martin, Olivier J. F.
    Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland..
    Sasaki, Minoru
    Toyota Technol Inst, Nagoya, Aichi 4688511, Japan..
    Solgaard, Olav
    Stanford Univ, Stanford, CA 94305 USA..
    Introduction to the Issue on Nanophotonics and Optical MEMS2009In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 15, no 5, p. 1307-1309Article in journal (Other academic)
  • 24.
    Pollnau, Markus
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Rare-Earth-Ion-Doped Channel Waveguide Lasers on Silicon2015In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 21, no 1, p. 1602512-Article in journal (Refereed)
    Abstract [en]

    This paper reviews the recent developments in rare-earth-ion-doped channel waveguide lasers. Optical gain in rare-earth-ion-doped waveguides has been increased by two orders of magnitude to similar to 1000 dB/cm and waveguide lasers with extremely high slope efficiencies and output powers exceeding the Watt level have been demonstrated. Of particular interest in integrated optics is the recent integration of rare-earth-ion-doped channel waveguide lasers in amorphous materials directly deposited on a silicon substrate. Remarkable performance with respect to slope efficiency, output power, and laser linewidth has been achieved.

  • 25. Qian, J.
    et al.
    Chen, Q. L.
    Cai, F. H.
    Kong, S. K.
    Ho, H. P.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Quantum-Dots-Doped ORMOSIL Nanoparticles as Optical Probes for Total Internal Reflection Fluorescence Imaging of Cancer Cells2009In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 15, no 5, p. 1374-1379Article in journal (Refereed)
    Abstract [en]

    We report the novel use of organically modified silica (ORMOSIL) nanoparticles to encapsulate hydrophobic quantum dots (QDs), thus making them hydrophilic and yet maintaining stable optical properties. QDs are resistant to photobleaching, and the cationic charge on the surfaces of the ORMOSIL nanoparticles can facilitate them being uptaken at the cell substrate regions. An objective-lens-based total internal reflection fluorescence (TIRF) microscope is used to observe the staining and dynamics of HeLa cancer cells, which have been targeted by the synthesized QD-doped ORMOSIL nanoparticles. Since the same microscope objective is used for launching the incident light beam and the collection lens, the observation and manipulation of live samples under a TIRF microscope is therefore much easier than that in the case of using the conventional prism-based TIRF setup. The present nanoparticle-assisted approach has made TIRF imaging a much more powerful tool for real-time monitoring of intracellular biological metabolic activities.

  • 26.
    Qian, Jun
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Fu, Tao
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Zhan, Qiuqiang
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Using Some Nanoparticles as Contrast Agents for Optical Bioimaging2010In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 16, no 3, p. 672-684Article in journal (Refereed)
    Abstract [en]

    The introduction of nanometric contrast agents to optical imaging is helpful for the understanding of some biological processes at the molecular level, as well as the development of diagnostic tools and therapies. Optical imaging agents such as gold nanorods (GNRs), quantum dots (QDs), and organically modified silica (ORMOSIL) nanoparticles can overcome many drawbacks of conventional agents, such as poor contrast, photobleaching, and low chemical and optical stability in biological environment. These nanoparticles can also be developed for absorbance, emission, and scattering in the near-IR region, which allows optical approaches for deep-tissue real-time imaging. The synthesis methods and optical properties of GNRs, QDs, and ORMOSIL nanoparticles are briefly introduced, and some of their applications in optical bioimaging are demonstrated. Specific targeting, "green" synthesis methods, and optical signal demodulation are also introduced.

  • 27.
    Qiu, Min
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Thylén, Lars
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    Jaskorzynska, Bozena
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Wave propagation through a photonic crystal in a negative phase refractive-index region2003In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 9, no 1, p. 106-110Article in journal (Refereed)
    Abstract [en]

    The wave propagation through a photonic crystal with a triangular lattice of air holes realized in the InP-InGaAsP heterostructure are studied theoretically for the transverse magnetic modes. The photonic crystal possesses a negative refractive index, and the self-focus of the beam is successfully observed. The weak side beams are observed due to high-order Bloch waves in the photonic crystal. The coupling efficiency for the outgoing waves to a waveguide is also studied.

  • 28.
    Sennaroglu, A.
    et al.
    Koc Univ, Dept Phys, TR-34450 Istanbul, Turkey.;Koc Univ, Dept Elect Elect Engn, TR-34450 Istanbul, Turkey.;Koc Univ, Surface Sci & Technol Ctr, TR-34450 Istanbul, Turkey.;Koc Univ, Coll Sci, TR-34450 Istanbul, Turkey..
    Fan, T. Y.
    MIT, Lincoln Lab, Lexington, MA 02421 USA..
    Kraenkel, C.
    Leibniz Inst Kristallzuchtung, Ctr Laser Mat, D-12489 Berlin, Germany..
    Nishizawa, N.
    Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648601, Japan.;Nagoya Univ, Dept Elect, Nagoya, Aichi 4648601, Japan..
    Pasiskevicius, Valdas
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Introduction to the Special Issue on Solid-State Lasers2018In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 24, no 5, article id 0200704Article in journal (Refereed)
  • 29.
    Sheng, Zhen
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Comparative Study of Losses in Ultrasharp Silicon-on-Insulator Nanowire Bends2009In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 15, no 5, p. 1406-1412Article in journal (Refereed)
    Abstract [en]

    Ultrasharp silicon-on-insulator (SOI) nanowire bends (with a bending radius of R < 2 mu m) are analyzed numerically. It is shown that the calculated bending losses for ultrasharp bends are overestimated when using a modal analysis method based on finite-difference method. In this case, reliable estimation of the bending loss can be made with a 3-D finite-difference time-domain (3-D-FDTD) method. By using 3-D-FDTD simulation, the losses in SOI nanowire bends with different structures and parameters are studied. By increasing the core width or height of the waveguide, one can reduce the bending loss at longer wavelengths for TE mode while the bending performance at shorter wavelengths degrades due to the multimode effect. Increasing the core height is much more effective to reduce the bending loss of TM mode than increasing core width. The relationship between the intrinsic Q-factor of a microring resonator and the bending radius is also obtained.

  • 30. Shi, Z. M.
    et al.
    He, Sailing
    KTH, Superseded Departments, Electromagnetic Theory.
    A three-focal-point method for the optimal design of a flat-top planar waveguide demultiplexer2002In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 8, no 6, p. 1179-1185Article in journal (Refereed)
  • 31. Song, J.
    et al.
    He, J. J.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Polarization performance analysis of etched diffraction grating demultiplexer using boundary element method2005In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 11, no 1, p. 224-231Article in journal (Refereed)
  • 32.
    Sun, Xu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China.
    Nanoscale Surface Plasmon Polariton Disk Resonators, a Theoretical Analysis2016In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 22, no 2Article in journal (Refereed)
    Abstract [en]

    We analyze whispering gallery-type disk resonators with radii down to 50 nm. Single interface waveguiding is accomplished by a plasmonic-dielectric interface operating near the surface plasmon polariton (SPP) resonance, employing a hypothetical material with lower loss than what is currently available in metals or negative permittivity media. The disk is immersed in a second dielectric, nonresonant to the plasmonic medium. Due to the high effective index of the disk mode and the concomitant low radiation losses, the quality (Q) values of the resonator are solely determined by material losses, in contrast to more conventional nanoscale resonators. We calculate the dependence of the effective indices of the guided mode, the Q values of absorption and radiation, and the Purcell factor on the deviation from the SPP resonance.

  • 33. Wang, Q.
    et al.
    He, Sailing
    KTH, Superseded Departments, Electromagnetic Theory.
    Chen, F. R.
    An effective and accurate method for the design of directional couplers2002In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 8, no 6, p. 1233-1238Article in journal (Refereed)
  • 34.
    Zhang, Pu
    et al.
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Jin, Yi
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Inverse Transformation Optics and Reflection Analysis for Two-Dimensional Finite-Embedded Coordinate Transformation2010In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 16, no 2, p. 427-432Article in journal (Refereed)
    Abstract [en]

    Inverse transformation optics is introduced, and used to calculate the reflection at the boundary of a transformation medium under consideration. The transformation medium for a practical device is obtained from a 2-D finite-embedded coordinate transformation (FECT), which is discontinuous at the boundary. For an electromagnetic excitation of particular polarization, many pairs of original medium (in a virtual space V') and inverse transformation can give exactly the same anisotropic medium through the conventional procedure of transformation optics. Nonuniqueness of these pairs is then exploited for the analysis and calculation of the boundary reflection. The reflection at the boundary of the anisotropic FECT medium (associated with the corresponding vacuum virtual space V) is converted to the simple reflection between two isotropic media in virtual space V' by a selected inverse transformation continuous at the boundary. A reflectionless condition for the boundary of the FECT medium is found as a special case. The theory is verified numerically with the finite element method.

  • 35.
    Zhou, Weidong
    et al.
    Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
    Liu, Shih-Chia
    Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
    Ge, Xiaochen
    Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
    Zhao, Deyin
    Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
    Yang, Hongjun
    Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
    Reuterskiöld-Hedlund, Carl
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Hammar, Mattias
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    On-Chip Photonic Crystal Surface-Emitting Membrane Lasers2019In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 25, no 3, article id 4900211Article in journal (Refereed)
    Abstract [en]

    Photonic crystal lasers can be realized either based on photonic bandgap defect mode or defect-free bandedge mode, while the bandgap is not essential for the latter. We review here defect-free bandedge mode based photonic crystal surface-emitting lasers (PCSELs) for on-chip integration. We first discuss ultra-thin membrane reflector vertical-cavity surface-emitting lasers (MR-VCSELs), where single layer photonic crystal slabs can be designed as a broadband membrane reflector. Later, we discuss another type of defect-free PCSELs where the lasing cavity is formed based on evanescent coupling of gain medium with the photonic crystal bandedge mode near bandedge. Cavity designs were carried out for the optimal modal overlap and high confinement factors. Lateral cavity size scaling was also investigated both theoretically and experimentally in PCSELs. Buried tunnel junction based InGaAsP quantum well heterostructures were also designed and incorporated into electrically injected PCSELs. Finally, discussions are given toward energy efficient lasers.

1 - 35 of 35
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf