Change search
Refine search result
1 - 8 of 8
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1. Al-Saadi, Mubarak J.
    et al.
    Al-Harthi, Salim H.
    Kyaw, Htet H.
    Myint, Myo T. Z.
    Bora, Tanujjal
    Laxman, Karthik
    Al-Hinai, Ashraf
    Dutta, Joydeep
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Influence of Atomic Hydrogen, Band Bending, and Defects in the Top Few Nanometers of Hydrothermally Prepared Zinc Oxide Nanorods2017In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 12, article id 22Article in journal (Refereed)
    Abstract [en]

    We report on the surface, sub-surface (top few nanometers) and bulk properties of hydrothermally grown zinc oxide (ZnO) nanorods (NRs) prior to and after hydrogen treatment. Upon treating with atomic hydrogen (H*), upward and downward band bending is observed depending on the availability of molecular H2O within the structure of the NRs. In the absence of H2O, the H* treatment demonstrated a cleaning effect of the nanorods, leading to a 0.51 eV upward band bending. In addition, enhancement in the intensity of room temperature photoluminescence (PL) signals due to the creation of new surface defects could be observed. The defects enhanced the visible light activity of the ZnO NRs which were subsequently used to photocatalytically degrade aqueous phenol under simulated sunlight. On the contrary, in the presence of H2O, H* treatment created an electronic accumulation layer inducing downward band bending of 0.45 eV (similar to 1/7th of the bulk ZnO band gap) along with the weakening of the defect signals as observed from room temperature photoluminescence spectra. The results suggest a plausible way of tailoring the band bending and defects of the ZnO NRs through control of H2O/H* species.

  • 2.
    Cheng, Dan-Chen
    et al.
    Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.;Fudan Univ, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China..
    Hao, Hong-Chen
    Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.;Fudan Univ, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China..
    Zhang, Miao
    KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics. Royal Inst Technol KTH, S-16440 Kista, Sweden..
    Shi, Wei
    Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.;Fudan Univ, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China..
    Lu, Ming
    Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.;Fudan Univ, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China..
    Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film2013In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 8, article id 291Article in journal (Refereed)
    Abstract [en]

    Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real contribution of the PL conversion was precisely assessed by investigating the photovoltaic responses of the QD-doped PLMA to monochromatic and AM0 light sources as functions of QD concentration, combined with reflectance and external quantum efficiency measurements. At a QD concentration of 1.6 mg/ml for example, among the efficiency enhancement of 5.96%, about 1.04% was due to the PL conversion, and the rest came from antireflection. Our work indicates that for the practical use of PL conversion in solar cell performance improvement, cautions are to be taken, as the achieved efficiency enhancement might not be wholly due to the PL conversion.

  • 3. Girgis, Emad
    et al.
    Wahsh, Mohamed M. S.
    Othman, Atef G. M.
    Bhandu, Lokeshwar
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Rao, K. Venkat
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Synthesis, magnetic and optical properties of core/shell Co(1-x)Zn(x)Fe(2)O(4)/SiO(2) nanoparticles2011In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 6, p. 460-Article in journal (Refereed)
    Abstract [en]

    The optical properties of multi-functionalized cobalt ferrite (CoFe(2)O(4)), cobalt zinc ferrite (Co(0.5)Zn(0.5)Fe(2)O(4)), and zinc ferrite (ZnFe(2)O(4)) nanoparticles have been enhanced by coating them with silica shell using a modified Stober method. The ferrites nanoparticles were prepared by a modified citrate gel technique. These core/shell ferrites nanoparticles have been fired at temperatures: 400 degrees C, 600 degrees C and 800 degrees C, respectively, for 2 h. The composition, phase, and morphology of the prepared core/shell ferrites nanoparticles were determined by X-ray diffraction and transmission electron microscopy, respectively. The diffuse reflectance and magnetic properties of the core/shell ferrites nanoparticles at room temperature were investigated using UV/VIS double-beam spectrophotometer and vibrating sample magnetometer, respectively. It was found that, by increasing the firing temperature from 400 degrees C to 800 degrees C, the average crystallite size of the core/shell ferrites nanoparticles increases. The cobalt ferrite nanoparticles fired at temperature 800 degrees C; show the highest saturation magnetization while the zinc ferrite nanoparticles coated with silica shell shows the highest diffuse reflectance. On the other hand, core/shell zinc ferrite/silica nanoparticles fired at 400 degrees C show a ferromagnetic behavior and high diffuse reflectance when compared with all the uncoated or coated ferrites nanoparticles. These characteristics of core/shell zinc ferrite/silica nanostructures make them promising candidates for magneto-optical nanodevice applications.

  • 4. Liu, Y. S.
    et al.
    Hong, X. K.
    Feng, J. F.
    Yang, Xifeng
    KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology.
    Fano-Rashba effect in thermoelectricity of a double quantum dot molecular junction2011In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 6, p. 618-Article in journal (Refereed)
    Abstract [en]

    We examine the relation between the phase-coherent processes and spin-dependent thermoelectric effects in an Aharonov-Bohm (AB) interferometer with a Rashba quantum dot (QD) in each of its arm by using the Green's function formalism and equation of motion (EOM) technique. Due to the interplay between quantum destructive interference and Rashba spin-orbit interaction (RSOI) in each QD, an asymmetrical transmission node splits into two spin-dependent asymmetrical transmission nodes in the transmission spectrum and, as a consequence, results in the enhancement of the spin-dependent thermoelectric effects near the spin-dependent asymmetrical transmission nodes. We also examine the evolution of spin-dependent thermoelectric effects from a symmetrical parallel geometry to a configuration in series. It is found that the spin-dependent thermoelectric effects can be enhanced by controlling the dot-electrode coupling strength. The simple analytical expressions are also derived to support our numerical results.PACS numbers: 73.63.Kv; 71.70.Ej; 72.20.Pa

  • 5.
    Polishchuk, Dmytr
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Tykhonenko-Polishchuk, Yuliya
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Borynskyi, Vladyslav
    NAS Ukraine, Inst Magnetism, UA-03142 Kiev, Ukraine.;MES Ukraine, UA-03142 Kiev, Ukraine..
    Kravets, Anatolii
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Tovstolytkin, Alexandr
    NAS Ukraine, Inst Magnetism, UA-03142 Kiev, Ukraine.;MES Ukraine, UA-03142 Kiev, Ukraine..
    Korenivski, Vladislav
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Magnetic Hysteresis in Nanostructures with Thermally Controlled RKKY Coupling2018In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 13, article id 245Article in journal (Refereed)
    Abstract [en]

    Mechanisms of the recently demonstrated ex-situ thermal control of the indirect exchange coupling in magnetic multilayer are discussed for different designs of the spacer layer. Temperature-induced changes in the hysteresis of magnetization are shown to be associated with different types of competing interlayer exchange interactions. Theoretical analysis indicates that the measured step-like shape and hysteresis of the magnetization loops is due to local in-plane magnetic anisotropy of nano-crystallites within the strongly ferromagnetic films. Comparison of the experiment and theory is used to contrast the mechanisms of the magnetization switching based on the competition of (i) indirect (RKKY) and direct (non-RKKY) interlayer exchange interactions as well as (ii) indirect ferromagnetic and indirect antiferromagnetic (both of RKKY type) interlayer exchange. These results, detailing the rich magnetic phase space of the system, should help enable the practical use of RKKY for thermally switching the magnetization in magnetic multilayers.

  • 6.
    Tan, Chunlin
    et al.
    South China Normal Univ, South China Acad Adv Optoelect, Ctr Opt & Electromagnet Res, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China..
    Zhou, Chao
    South China Normal Univ, South China Acad Adv Optoelect, Ctr Opt & Electromagnet Res, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China..
    Peng, Xingyun
    South China Normal Univ, South China Acad Adv Optoelect, Ctr Opt & Electromagnet Res, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China..
    Zhi, Huozhen
    South China Normal Univ, Sch Chem & Environm, Minist Educ, Engn Res Ctr MTEES, Guangzhou 510006, Guangdong, Peoples R China..
    Wang, Dan
    Beijing Univ Chem Technol, State Key Lab Organ Inorgan Composites, Beijing 100029, Peoples R China..
    Zhan, Qiuqiang
    South China Normal Univ, South China Acad Adv Optoelect, Ctr Opt & Electromagnet Res, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China..
    He, Sailing
    KTH, School of Engineering Sciences (SCI), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering and Computer Science (EECS), Electromagnetic Engineering. South China Normal Univ, South China Acad Adv Optoelect, Ctr Opt & Electromagnet Res, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China..
    Sulfuric Acid Assisted Preparation of Red-Emitting Carbonized Polymer Dots and the Application of Bio-lmaging2018In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 13, article id 272Article in journal (Refereed)
    Abstract [en]

    Red-emitting carbonized polymer dots (CPDs) was prepared from p-phenylenediamine (p-PD) aqueous solution with the assistance of sulfuric acid (H2SO4), and the optical properties and bio-imaging application were studied in this paper. Compared with other strong acids-assisted systems, SA-CPDs (prepared from H2SO4-assisted system, average diameter is similar to 5 nm) is the brightest. The photoluminescence Quantum Yields (QYs) is 21.4% (in water), and the product yield is 16.5%. SA-CPDs aqueous solution emits at 600 nm when excited by the light from 300 to 580 nm. The emission wavelength is independent on the excitation wavelength. Formation energies of CPDs in two ways were calculated to show that longitudinal growth (forming polymers) is difficult, and the transverse growth (forming CPDs) is easy. In addition, the two-photon photoluminescence properties (emitting at 602 nm when excited by 850 nm femtosecond pulse laser) of SA-CPDs were also utilized in the experiments for HeLa cells staining and shown to have potential applications in bio-imaging.

  • 7. Wang, Guilei
    et al.
    Luo, Jun
    Liu, Jinbiao
    Yang, Tao
    Xu, Yefeng
    Li, Junfeng
    Yin, Huaxiang
    Yan, Jiang
    Zhu, Huilong
    Zhao, Chao
    Ye, Tianchun
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology2017In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 12, article id 306Article in journal (Refereed)
    Abstract [en]

    In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH4 is superior to that of devices featuring ALD W using B2H6. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH4 and B2H6 precursors, i.e. tensile stresses for SiH4 (similar to 2.4 GPa) and for B2H6 (similar to 0.9 GPa).

  • 8. Wang, Guilei
    et al.
    Luo, Jun
    Qin, Changliang
    Liang, Renrong
    Xu, Yefeng
    Liu, Jinbiao
    Li, Junfeng
    Yin, Huaxiang
    Yan, Jiang
    Zhu, Huilong
    Xu, Jun
    Zhao, Chao
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Ye, Tianchun
    Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors2017In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 12, article id 123Article in journal (Refereed)
    Abstract [en]

    In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-xGex growth (0.35 <= x <= 0.40) with boron concentration of 1-3 x 10(20) cm(-3) was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.

1 - 8 of 8
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf