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  • 1.
    Badel, Xavier
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Linnros, Jan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Electrochemical etching of n-type silicon based on carrier injection from a back side p-n junction2003In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 6, no 6, p. C79-C81Article in journal (Refereed)
    Abstract [en]

    A technique for electrochemical etching of n-type silicon in aqueous hydrofluoric acid is presented. This technique differs from photoelectrochemical etching because the holes (positive carriers) needed for the dissolution reaction to occur, are not photogenerated. The principle developed here is to inject these positive carriers using a p-n junction under forward bias formed at the back side of the sample. Drift-diffusion of holes through the wafer thickness allows a chemical dissolution reaction at the interface with the electrolyte. To enable holes diffusing through the wafer the minority carrier lifetime must be sufficiently high making the technique well adapted for high resistivity silicon. However, extension to low resistivity wafers has been achieved. Results show the possibility of forming pore arrays and diverse 3D structures.

  • 2. Barrios, C. A.
    et al.
    Messmer, E. R.
    Holmgren, M.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP: Fe regrowth2000In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 3, no 9, p. 439-441Article in journal (Refereed)
    Abstract [en]

    Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.

  • 3.
    Björkbacka, Åsa
    et al.
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology.
    Hosseinpour, S.
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology.
    Leygraf, Christopher
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology.
    Jonsson, M.
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology.
    Erratum to: Radiation Induced Corrosion of Copper in Anoxic Aqueous Solution (vol 15, pg C5, 2012)2012In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 15, no 6, p. S5-S5Article in journal (Refereed)
  • 4.
    Björkbacka, Åsa
    et al.
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Applied Physical Chemistry. Show more KTH Royal Inst Technol, Sch Chem Sci & Engn, SE-10044 Stockholm, Sweden..
    Hosseinpour, Saman
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Surface and Corrosion Science. Show more KTH Royal Inst Technol, Sch Chem Sci & Engn, SE-10044 Stockholm, Sweden..
    Leygraf, Christofer
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Surface and Corrosion Science. Show more KTH Royal Inst Technol, Sch Chem Sci & Engn, SE-10044 Stockholm, Sweden..
    Jonsson, Mats
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Applied Physical Chemistry. Show more KTH Royal Inst Technol, Sch Chem Sci & Engn, SE-10044 Stockholm, Sweden..
    Radiation Induced Corrosion of Copper in Anoxic Aqueous Solution2012In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 15, no 5, p. C5-C7Article in journal (Refereed)
    Abstract [en]

    The effect of gamma radiation on corrosion of copper under anoxic conditions in pure water has been studied experimentally. Copper samples submerged in water were exposed to dose rates of 0.37 or 0.77 kGy/h. Reference samples were used throughout. The copper surfaces have been examined using the techniques of SEM-EDS, IRAS, CR spectroscopy and AFM. Dissolution of copper was measured using ICP-OES. The results show that irradiated samples are more corroded than corresponding reference samples. This is also reflected by the increased concentration of copper in water after irradiation. Surface examination also reveals local corrosion features.

  • 5. Chen, Si
    et al.
    Nyholm, Leif
    Jokilaakso, Nima
    KTH, School of Biotechnology (BIO), Molecular Biotechnology.
    Karlström, Amelie Eriksson
    KTH, School of Biotechnology (BIO), Molecular Biotechnology.
    Linnros, Jan
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Smith, Ulf
    Zhang, Shi-Li
    Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes2011In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 14, no 7, p. J34-J37Article in journal (Refereed)
    Abstract [en]

    Current instability is observed for silicon nanowire field-effect transistors operating in electrolytes with Pt gate electrodes. A comparative study involving an Ag/AgCl-reference gate electrode reveals that the effect results from a drift in the potential at the Pt-electrode/electrolyte interface. In a phosphate buffer saline of pH 7.4, the stabilization of the potential of the Pt electrode was found to require approximately 1000 s. A concurrent potential drift, with a comparable time constant, occurring at the electrolyte/oxidized-nanowire interface rendered a complex device current response which complicated the interpretation of the results.

  • 6.
    Davoodi, Ali
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Pan, Jinshan
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Leygraf, Christofer
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Norgren, S.
    Sapa Technology, Finspång.
    In-situ investigation of localized corrosion of aluminum alloys in chloride solution using integrated EC-AFM/SECM technique2005In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 8, no 6, p. B21-B24Article in journal (Refereed)
    Abstract [en]

    Scanning electrochemical microscopy (SECM) has been integrated with electrochemical atomic force microscopy (EC-AFM), and applied for in situ studies of localized corrosion of Al alloys in NaCl solution. The instrument utilizes a dual mode probe, which functions both as a normal cantilever and as an ultramicroelectrode. The I-/I3- redox mediator was used for mapping of local electrochemical current. Concurrent topography and electrochemical activity maps have been obtained on the same surface area with micrometer lateral resolution. Preliminary results show ongoing localized dissolution related to intermetallic particles in the Al alloys, which may occur well below the breakdown potential.

  • 7. Feng, B.
    et al.
    Wang, C. Y.
    Zhu, Bin
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology, Chemical Reaction Engineering.
    Catalysts and performances for direct methanol low-temperature (300 to 600 degrees C) solid oxide fuel cells2006In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 9, no 2, p. A80-A81Article in journal (Refereed)
    Abstract [en]

    A novel anode catalyst, C-MO-SDC (C=activated carbon/carbon black, M=Cu, Ni, Co, SDC=Ce0.9Sm0.1O1.95) was synthesized by employing a citrate/nitrate combustion technique. Carbon materials, e.g., activated carbon and carbon black were first used to improve the solid oxide fuel cell (SOFC) anode properties, especially to improve the microstructure and to enhance the anode conductivity and catalyst function for directly operating methanol as the fuel. The resulting anode catalyst C-MO-SDC materials used in a SOFC device have successfully achieved a high power density of 0.25 W cm(-2) by directly operating the methanol at 560 degrees C.

  • 8. Gottlob, H. D. B.
    et al.
    Echtermeyer, T. J.
    Schmidt, M.
    Mollenhauer, T.
    Wahlbrink, T.
    Lemme, Max C.
    AMO GmbH, AMICA, Aachen, Germany.
    Kurz, H.
    Leakage current mechanisms in epitaxial Gd(2)O(3) high-k gate dielectrics2008In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 11, no 3, p. G12-G14Article in journal (Refereed)
    Abstract [en]

    We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd(2)O(3)) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd(2)O(3) thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction.

  • 9.
    Isheden, Christian
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hellström, Per-Erik
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Radamson, Henry H.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Zhang, Shi-Li
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Östling, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth2004In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 7, no 4, p. G53-G55Article in journal (Refereed)
    Abstract [en]

    A source/drain extension process that uses HCl etching followed by selective growth of in situ B-doped SiGe is demonstrated. The two key process steps, etching and growth, are integrated by performing them consecutively in the same chemical vapor deposition reactor. The technique has the potential to solve end-of-the-roadmap requirements on junction depth, junction abruptness, and active doping concentration.

  • 10. Li, S.
    et al.
    Sun, J. C.
    Sun, X. L.
    Zhu, Bin
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology.
    A high functional cathode material2006In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 9, no 2, p. A86-A87Article in journal (Refereed)
    Abstract [en]

    A novel type of LaNi1-xFexO3 (x=0.4-0.8) (LNF) perovskite oxide, specifically LaNi0.4Fe0.6O3 (LNF-46), was synthesized and studied as the cathode for low-temperature, 400-500 degrees C, solid oxide fuel cells (LTSOFCs). The maximum power density of 227 mW/cm(2) was obtained at 450 degrees C and a rather close result was also obtained at 400 degrees C. The cell performance showed that with a proper choice of the LNF-based cathode material and a suitable electrolyte, the operation of LTSOFC at temperatures 400-500 degrees C is a realistic goal.

  • 11. Lu, Jun
    et al.
    Luo, Jun
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hultman, Lars
    Kinetics and morphology of Ni1-xPtx-silicide epitaxy on Si(001)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775Article in journal (Other academic)
  • 12. Lu, Jun
    et al.
    Luo, Jun
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT).
    Hultman, Lars
    On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)2010In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 13, no 10, p. H360-H362Article in journal (Refereed)
    Abstract [en]

    Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.

  • 13. Matic, H.
    et al.
    Lundblad, Anders
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology, Applied Electrochemistry.
    Lindbergh, Göran
    KTH, School of Chemical Science and Engineering (CHE), Chemical Engineering and Technology, Applied Electrochemistry.
    Jacobsson, P.
    In situ micro-Raman on the membrane in a working PEM cell2005In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 8, no 1, p. A5-A7Article in journal (Refereed)
    Abstract [en]

    An electrochemical cell has been designed for in situ micro-Raman measurements on the polymer membrane in an operating polymer electrolyte cell (PEM). The method is applicable to studies of both the distribution of water and membrane structure in the working cell environment. An initial study of the water distribution across a Nafion 117 membrane in a cell working as a H-2/H-2 pump cell at hydrogen flow and currents from 0 to 300 mA/cm(2) is presented. The results show that a hydration profile with a lower water content at the anode forms as current is applied to the cell.

  • 14. Pejnefors, J.
    et al.
    Zhang, Shi-Li
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Radamsson, H. H.
    Östling, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor2001In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 4, no 11, p. G98-G100Article in journal (Refereed)
    Abstract [en]

    Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is studied by monitoring the growth rate of films deposited on bare S. silicon-on-insulator (SOI), and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si. due to different kinetics dictating the two depositions. Epitaxy of Si on SOI shows a higher overall growth rate than on hare Si. Likewise, deposition of polycrystalline Si on oxidized Si wafer with a 4000 Angstrom thick oxide has a higher growth rate than on that with 15 Angstrom oxide. These are attributed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation in affecting the growth rate for the depositions studied.

  • 15.
    Sathirachinda, Namurata
    et al.
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Gubner, Rolf
    Pan, Jinshan
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Kivisakk, Ulf
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Characterization of phases in duplex stainless steel by magnetic force microscopy/scanning kelvin probe force microscopy2008In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 11, no 7, p. C41-C45Article in journal (Refereed)
    Abstract [en]

    A 2205 duplex stainless steel, which had undergone a slow cooling process in order to precipitate intermetallic phases, was characterized by means of magnetic force microscopy (MFM) and scanning Kelvin probe force microscopy (SKPFM), in addition to conventional scanning electron microscope and energy-dispersive spectroscopy analysis. MFM measurements yield information about the magnetic domain distribution, while SKPFM provides the variation in Volta potential between austenite (gamma), ferrite (alpha), and sigma phases (sigma). In general, paramagnetic austenite exhibits the highest Volta potential, followed by nonmagnetic sigma phase and ferromagnetic ferrite, respectively. Results show the applicability of MFM/SKPFM techniques for characterization of the individual phase properties of duplex stainless steel. Because a cross talk between magnetic and Volta potential signals has been observed, it is recommended to perform SKPFM measurements with nonmagnetic tips.

  • 16. Soderstrom, D.
    et al.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Wallnas, M.
    Dadgar, A.
    Stenzel, O.
    Bimberg, D.
    Schumann, H.
    Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy2001In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 4, no 6, p. G53-G55Article in journal (Refereed)
    Abstract [en]

    Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.

  • 17.
    Sun, Yan-Ting
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Avella, M.
    Jimenez, J.
    Sulfur-doped indium phosphide on silicon substrate brown by ELOG2004In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 7, no 11, p. G269-G271Article in journal (Refereed)
    Abstract [en]

    The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.

  • 18. Szakalos, P.
    et al.
    Hultquist, Gunnar
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Wikmark, G.
    Response to the comment on "Corrosion of copper by water" Electrochem. Solid-State Lett., 10, C63, (2007)2008In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 11, no 4, p. S2-S2Article in journal (Refereed)
  • 19. Szakalos, Peter
    et al.
    Hultquist, Gunnar
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Wikmark, G.
    Corrosion of copper by water2007In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 10, no 11, p. C63-C67Article in journal (Refereed)
    Abstract [en]

    We have studied copper corrosion in a system comprised of deionized water, absolute pressure gauges, and a palladium membrane. A transition from O-2-consuming to H-2-evolving copper corrosion is observed, which indicates that copper can corrode by water itself. The equilibrium hydrogen pressure in corrosion of copper by water at 73 degrees C exceeds the steady-state atmospheric hydrogen pressure (5 x 10(-7) bar) by a factor of about 2000. The growth of a hydrogen-containing corrosion product in O-2-free water is controlled by the hydrogen removal from the corroding surface. The results are discussed in the perspective of conventional potential-pH diagram for copper.

  • 20. Wu, D.
    et al.
    Lu, J.
    Hellström, Per-Erik
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Östling, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Zhang, Shi-Li
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Notched-gate pMOSFET with ALD TiN/high-kappa gate stack formed by selective wet etching2004In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 7, no 10, p. G228-G230Article in journal (Refereed)
    Abstract [en]

    Proof-of-concept notched-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with the integration of atomic layer deposition (ALD) metal gate/high-kappa dielectric is demonstrated. The notched gate is formed by a combination of plasma dry etch and subsequent selective wet etch of a poly-Si0.7Ge0.3/TiN bilayer gate electrode stack. The height of the notch is determined mainly by the thickness of the TiN layer, and the width is controlled by the wet underetch of the TiN beneath the Si0.7Ge0.3 layer. Compared with reference MOS transistors with a similar gate stack, the notched gate pMOSFETs exhibited an expected reduction of the parasitic overlap capacitances.

  • 21.
    Öhman, Maria
    et al.
    Kimab.
    Persson, Dan
    KIMAB.
    Leygraf, Christofer
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    A spectroelectrochemical study of metal/polymer interfaces by simultaneous in situ ATR-FTIR and EIS2007In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 10, no 4, p. C27-C30Article in journal (Refereed)
    Abstract [en]

    Buried aluminum/polymer interfaces were studied using a spectroelectrochemical experimental setup based on simultaneous in situ attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and electrical impedance spectroscopy (EIS). Transport of water and electrolyte through the polymer film to the aluminum/polymer interface and oxidation/corrosion of aluminum was followed by ATR-FTIR, while the impedance behavior of the system was simultaneously studied by EIS. As the ATR-FTIR technique is specific for the aluminum/polymer interfacial region while EIS takes into account alterations of both the polymer bulk and the interface, the combined setup provides complementary information of the system investigated.

  • 22.
    Öijerholm, Johan
    et al.
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Fafilek, Günter
    Institute of Chemical Technology and Analytics, University of Technology of Vienna.
    Pan, Jinshan
    KTH, School of Chemical Science and Engineering (CHE), Chemistry, Corrosion Science.
    Study of Initial Oxidation of Engineering Alloys by High Temperature Cyclic Voltammetry2007In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 10, no 6, p. 47-50Article in journal (Refereed)
    Abstract [en]

    The initial oxidation of Fe-, Co-, and Ni-based engineering alloys was studied in situ by high-temperature cyclic voltammetry. Measurements were performed at constant temperatures between 500 and 800 degrees C in an electrochemical cell utilizing oxygen ion-conducting yttria-stabilized zirconia as electrolyte and a reference electrode whose potential is determined by the oxygen activity in the ambient gas. The recorded voltammograms show clear current peaks that are associated with the oxidation of the base metal in the investigated alloys. For the Fe- based alloy, multiple peaks are observed, showing oxidation of Fe into different valence oxides. The results indicate that the base metal oxide is formed in the initial oxidation process of these engineering alloys, which may influence long-term high-temperature oxidation resistance of the alloys.

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