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  • 1.
    Guan, Tianfu
    et al.
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany..
    Chen, Wei
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany.;Shenzhen Technol Univ, Ctr Adv Mat Diagnost Technol, Shenzhen Key Lab Ultraintense Laser & Adv Mat Tech, Shenzhen 518118, Peoples R China.;Shenzhen Technol Univ, Coll Engn Phys, Shenzhen 518118, Peoples R China..
    Tang, Haodong
    Shenzhen Technol Univ, Coll Integrated Circuits & Optoelect Chips, Shenzhen 518118, Peoples R China..
    Li, Dong
    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China..
    Wang, Xiao
    Shenzhen Technol Univ, Ctr Adv Mat Diagnost Technol, Shenzhen Key Lab Ultraintense Laser & Adv Mat Tech, Shenzhen 518118, Peoples R China.;Shenzhen Technol Univ, Coll Engn Phys, Shenzhen 518118, Peoples R China..
    Weindl, Christian L.
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany..
    Wang, Yawen
    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China..
    Liang, Zhiqiang
    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China..
    Liang, Suzhe
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany..
    Xiao, Tianxiao
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany..
    Tu, Suo
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany..
    Roth, Stephan V.
    KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Fibre- and Polymer Technology, Fiberprocesser. Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany..
    Jiang, Lin
    Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China..
    Mueller-Buschbaum, Peter
    Tech Univ Munich, TUM Sch Nat Sci, Dept Phys, Chair Funct Mat, D-85748 Garching, Germany.;Tech Univ Munich, Heinz Maier Leibnitz Zent MLZ, D-85748 Garching, Germany..
    Decoding the Self-Assembly Plasmonic Interface Structure in a PbS Colloidal Quantum Dot Solid for a Photodetector2023In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 17, no 22, p. 23010-23019Article in journal (Refereed)
    Abstract [en]

    Hybrid plasmonic nanostructures have gained enormous attention in a variety of optoelectronic devices due to their surface plasmon resonance properties. Self-assembled hybrid metal/quantum dot (QD) architectures offer a means of coupling the properties of plasmonics and QDs to photodetectors, thereby modifying their functionality. The arrangement and localization of hybrid nanostructures have an impact on exciton trapping and light harvesting. Here, we present a hybrid structure consisting of self-assembled gold nanospheres (Au NSs) embedded in a solid matrix of PbS QDs for mapping the interface structures and the motion of charge carriers. Grazing-incidence small-angle X-ray scattering is utilized to analyze the localization and spacing of the Au NSs within the hybrid structure. Furthermore, by correlating the morphology of the Au NSs in the hybrid structure with the corresponding differences observed in the performance of photodetectors, we are able to determine the impact of interface charge carrier dynamics in the coupling structure. From the perspective of architecture, our study provides insights into the performance improvement of optoelectronic devices.

  • 2.
    Yin, Shanshan
    et al.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Tian, Ting
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Weindl, Christian L.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Wienhold, Kerstin S.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Ji, Qing
    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China..
    Cheng, Yajun
    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China..
    Li, Yanan
    Tech Univ Munich, Phys Dept, Fachgebiet Phys Weicher Materie, D-85748 Garching, Germany..
    Papadakis, Christine M.
    Tech Univ Munich, Phys Dept, Fachgebiet Phys Weicher Materie, D-85748 Garching, Germany..
    Schwartzkopf, Matthias
    Deutsch Elektronen Synchrotron DESY, D-22603 Hamburg, Germany..
    Roth, Stephan V.
    KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Fibre- and Polymer Technology, Biocomposites. Deutsch Elektronen Synchrotron DESY, D-22603 Hamburg, Germany..
    Mueller-Buschbaum, Peter
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany.;Tech Univ Munich, Heinz Maier Leibnitz Zentrum MLZ, D-85748 Garching, Germany..
    In Situ GISAXS Observation and Large Area Homogeneity Study of Slot-Die Printed PS-b-P4VP and PS-b-P4VP/FeCl3 Thin Films2022In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 14, no 2, p. 3143-3155Article in journal (Refereed)
    Abstract [en]

    Mesoporous hematite (alpha-Fe2O3) thin films with high surface-to-volume ratios show great potential as photoelectrodes or electrochemical electrodes in energy conversion and storage. In the present work, with the assistance of an up-scalable slot-die coating technique, locally highly ordered alpha-Fe2O3 thin films are successfully printed based on the amphiphilic diblock copolymer poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) as a structure-directing agent. Pure PS-b-P4VP films are printed under the same conditions for comparison. The micellization of the diblock copolymer in solution, the film formation process of the printed thin films, the homogeneity of the dry films in the lateral and vertical direction as well as the morphological and compositional information on the calcined hybrid PS-b-P4VP/FeCl3 thin film are investigated. Because of convection during the solvent evaporation process, a similar dimple-type structure of vertically aligned cylindrical PS domains in a P4VP matrix developed for both printed PS-b-P4VP and hybrid PS-b-P4VP/FeCl3 thin films. The coordination effect between the Fe3+ ions and the vinylpyridine groups significantly affects the attachment ability of the P4VP chains to the silicon substrate. Accordingly, distinct feature sizes and homogeneity in the lateral direction, as well as the thicknesses in the perpendicular direction, are demonstrated in the two printed films. By removing the polymer template from the hybrid PS-b-P4VP/FeCl3 film at high temperature, a locally highly ordered mesoporous alpha-Fe2O3 film is obtained. Thus, a facile and up-scalable printing technique is presented for producing homogeneous mesoporous alpha-Fe2O3 thin films.

  • 3.
    Zou, Yuqin
    et al.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Yuan, Shuai
    Renmin Univ China, Dept Chem, Beijing 100872, Peoples R China..
    Buyruk, Ali
    Univ Munich LMU, Chair Phys Chem, Dept Chem, D-81377 Munich, Germany.;Univ Munich LMU, Ctr NanoSci CeNS, D-81377 Munich, Germany..
    Eichhorn, Johanna
    Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany.;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany..
    Yin, Shanshan
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Reus, Manuel A.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Xiao, Tianxiao
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Pratap, Shambhavi
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Liang, Suzhe
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Weindl, Christian L.
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Chen, Wei
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
    Mu, Cheng
    Renmin Univ China, Dept Chem, Beijing 100872, Peoples R China..
    Sharp, Ian D.
    Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany.;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany..
    Ameri, Tayebeh
    Univ Munich LMU, Chair Phys Chem, Dept Chem, D-81377 Munich, Germany.;Univ Munich LMU, Ctr NanoSci CeNS, D-81377 Munich, Germany..
    Schwartzkopf, Matthias
    DESY, D-22607 Hamburg, Germany..
    Roth, Stephan V.
    KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Fibre- and Polymer Technology, Biocomposites. DESY, D-22607 Hamburg, Germany..
    Mueller-Buschbaum, Peter
    Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany.;Tech Univ Munich, Heinz Maier Leibnitz Zentrum MLZ, D-85748 Garching, Germany..
    The Influence of CsBr on Crystal Orientation and Optoelectronic Properties of MAPbI(3)-Based Solar Cells2022In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 14, no 2, p. 2958-2967Article in journal (Refereed)
    Abstract [en]

    Crystal orientations are closely related to the behavior of photogenerated charge carriers and are vital for controlling the optoelectronic properties of perovskite solar cells. Herein, we propose a facile approach to reveal the effect of lattice plane orientation distribution on the charge carrier kinetics via constructing CsBr-doped mixed cation perovskite phases. With grazing-incidence wide-angle X-ray scattering measurements, we investigate the crystallographic properties of mixed perovskite films at the microscopic scale and reveal the effect of the extrinsic CsBr doping on the stacking behavior of the lattice planes. Combined with transient photocurrent, transient photovoltage, and space-charge-limited current measurements, the transport dynamics and recombination of the photogenerated charge carriers are characterized. It is demonstrated that CsBr compositional engineering can significantly affect the perovskite crystal structure in terms of the orientation distribution of crystal planes and passivation of trap-state densities, as well as simultaneously facilitate the photogenerated charge carrier transport across the absorber and its interfaces. This strategy provides unique insight into the underlying relationship between the stacking pattern of crystal planes, photogenerated charge carrier transport, and optoelectronic properties of solar cells.

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