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  • 1. Del, Sepideh Khandan
    et al.
    Bornemann, Rainer
    Bablich, Andreas
    Schaefer-Eberwein, Heiko
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Kowald, Torsten
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Bolivar, Peter Haring
    Lemme, Max C.
    Optimizing the optical and electrical properties of graphene ink thin films by laser-annealing2015In: 2D Materials, ISSN 2053-1583, Vol. 2, no 1, article id 011003Article in journal (Refereed)
    Abstract [en]

    We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about 30 kΩ/sq. These values constitute an increase of 45% in transparency, a reduction of surface roughness by a factor of four and a decrease of 70% in sheet resistance compared to un-annealed films.

  • 2.
    Lemme, Max C.
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Smith, Anderson D.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Rodriguez, Saul
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Rusu, Ana
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Graphene for More Moore and More Than Moore applications2012In: IEEE Silicon Nanoelectronics Workshop, SNW, IEEE , 2012, p. 6243322-Conference paper (Refereed)
    Abstract [en]

    Graphene has caught the attention of the electronic device community as a potential future option for More Moore and More Than Moore devices and applications. This is owed to its remarkable material properties, which include ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm 2/Vs in pristine graphene. Furthermore, standard CMOS technology may be applied to graphene in order to make devices. Integrated graphene devices, however, are performance limited by scattering due to defects in the graphene and its dielectric environment [1, 2] and high contact resistance [3, 4]. In addition, graphene has no energy band gap (Figure 1) and hence graphene MOSFETs (GFETs) cannot be switched off, but instead show ambipolar behaviour [5]. This has steered interest away from logic to analog radio frequency (RF) applications [6, 7]. This talk will systematically compare the expected RF performance of realistic GFETs with current silicon CMOS technology [8]. GFETs slightly lag behind in maximum cut-off frequency F T,max (Figure 2) up to a carrier mobility of 3000 cm 2/Vs, where they can achieve similar RF performance as 65nm silicon FETs. While a strongly nonlinear voltage-dependent gate capacitance inherently limits performance, other parasitics such as contact resistance are expected to be optimized as GFET process technology improves.

  • 3.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ink-jet printing of thin film transistors based on carbon nanotubes2010Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. The main challenge of this work is to suppress the effects of “metallic SWCNT contamination” and improve the device electrical performance. To this end, this thesis entails a balance between experiments and simulations.

     

    First, TFTs with low-density SWCNTs in the channel region are fabricated by utilizing standard silicon technology. Their electrical performance is investigated in terms of throughput, transfer characteristics, dimensional scaling and dependence on electrode metals. The demonstrated insensitivity of electrical performance to the electrode metals lifts constrains on choosing metal inks for ink-jet printing.

     

    Second, Monte Carlo models on the basis of percolation theory have been established, and high-efficiency algorithms have been proposed for investigations of large-size stick systems in order to facilitate studies of TFTs with channel length up to 1000 times that of the SWCNTs. The Monte Carlo simulations have led to fundamental understanding on stick percolation, including high-precision percolation threshold, universal finite-size scaling function, and dependence of critical conductivity exponents on assignment of component resistance. They have further generated understanding of practical issues regarding heterogeneous percolation systems and the doping effects in SWCNT TFTs.

     

    Third, Monte Carlo simulations are conducted to explore new device structures for performance improvement of SWCNT TFTs. In particular, a novel device structure featuring composite SWCNT networks in the channel is predicted by the simulation and subsequently confirmed experimentally by another research group. Through Monte Carlo simulations, the compatibility of previously-proposed long-strip-channel SWCNT TFTs with ink-jet printing has also been demonstrated.

     

    Finally, relatively sophisticated ink-jet printing techniques have been developed for SWCNT TFTs with long-strip channels. This research spans from SWCNT ink formulation to device design and fabrication. SWCNT TFTs are finally ink-jet printed on both silicon wafers and flexible Kapton substrates with fairly high electrical performance.

  • 4.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Delekta, Szymon Sollami
    Zhang, Panpan
    Yang, Sheng
    Lohe, Martin R.
    Zhuang, Xiaodong
    Feng, Xinliang
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Scalable Fabrication and Integration of Graphene Microsupercapacitors through Full Inkjet Printing2017In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 11, no 8, p. 8249-8256Article in journal (Refereed)
    Abstract [en]

    A simple full-inkjet-printing technique is developed for the scalable fabrication of graphene-based microsupercapacitors (MSCs) on various substrates. High-performance graphene inks are formulated by integrating the electrochemically exfoliated graphene with a solvent exchange technique to reliably print graphene interdigitated electrodes with tunable geometry and "thickness. Along with the printed polyelectrolyte, poly(4-styrenesulfonic acid), the fully printed graphene-based MSCs attain the highest areal capacitance of similar to 0.7 mF/cm(2), substantially advancing the state-of-art of all-solid-state MSCs with printed graphene electrodes. The full printing solution enables scalable fabrication of MSCs and effective connection of them in parallel and/or in series at various scales. Remarkably, more than 100 devices have been connected to form large-scale MSC arrays as power banks on both silicon wafers and Kapton. Without any extra protection or encapsulation, the MSC arrays can be reliably charged up to 12 V and retain the performance even 8 months after fabrication.

  • 5.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. University of Siegen, Germany.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Inkjet Printing of 2D Layered Materials2014In: ChemPhysChem, ISSN 1439-4235, E-ISSN 1439-7641, Vol. 15, no 16, p. 3427-3434Article in journal (Refereed)
    Abstract [en]

    Inkjet printing of 2D layered materials, such as graphene and MoS2, has attracted great interests for emerging electronics. However, incompatible rheology, low concentration, severe aggregation and toxicity of solvents constitute critical challenges which hamper the manufacturing efficiency and product quality. Here, we introduce a simple and general technology concept (distillation-assisted solvent exchange) to efficiently overcome these challenges. By implementing the concept, we have demonstrated excellent jetting performance, ideal printing patterns and a variety of promising applications for inkjet printing of 2D layered materials.

  • 6.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Mishukova, Viktoriia
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. Univ Grenoble Alpes, France.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    All-solid-state micro-supercapacitors based on inkjet printed graphene electrodes2016In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 109, no 12, article id 123901Article in journal (Refereed)
    Abstract [en]

    The all-solid-state graphene-based in-plane micro-supercapacitors are fabricated simply through reliable inkjet printing of pristine graphene in interdigitated structure on silicon wafers to serve as both electrodes and current collectors, and a following drop casting of polymer electrolytes (polyvinyl alcohol/H3PO4). Benefiting from the printing processing, an attractive porous electrode microstructure with a large number of vertically orientated graphene flakes is observed. The devices exhibit commendable areal capacitance over 0.1 mF/cm(2) and a long cycle life of over 1000 times. The simple and scalable fabrication technique for efficient micro-supercapacitors is promising for on-chip energy storage applications in emerging electronics.

  • 7.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Naiini, Maziar M.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. University of Siegen, Germany.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Inkjet Printing of MoS22014In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 24, no 41, p. 6524-6531Article in journal (Refereed)
    Abstract [en]

    A simple and efficient inkjet printing technology is developed for molybdenum disulfide (MoS2), one of the most attractive two-dimensional layered materials. The technology effectively addresses critical issues associated with normal MoS2 liquid dispersions (such as incompatible rheology, low concentration, and solvent toxicity), and hence can directly and reliably write uniform patterns of high-quality (5-7 nm thick) MoS2 nanosheets at a resolution of tens of micrometers. The technology efficiency facilitates the integration of printed MoS2 patterns with other components (such as electrodes), and hence allows fabricating various functional devices, including thin film transistors, photoluminescence patterns, and photodetectors, in a simple, massive and cost-effective manner while retains the unique properties of MoS2. The technology has great potential in a variety of applications, such as photonics, optoelectronics, sensors, and energy storage.

  • 8.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ostling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Precise percolation thresholds of two-dimensional random systems comprising overlapping ellipses2016In: Physica A: Statistical Mechanics and its Applications, ISSN 0378-4371, E-ISSN 1873-2119, Vol. 462, p. 940-950Article in journal (Refereed)
    Abstract [en]

    This work explores the percolation thresholds of continuum systems consisting of randomly-oriented overlapping ellipses. High-precision percolation thresholds for various homogeneous ellipse systems with different aspect ratios are obtained from extensive Monte Carlo simulations based on the incorporation of Vieillard-Baron's contact function of two identical ellipses with our efficient algorithm for continuum percolation. In addition, we generalize Vieillard-Baron's contact function from identical ellipses to unequal ellipses, and extend the Monte Carlo algorithm to heterogeneous ellipse systems where the ellipses have different dimensions and/or aspect ratios. Based on the concept of modified excluded area, a general law is verified for precise prediction of percolation threshold for many heterogeneous ellipse systems. In particular, the study of heterogeneous ellipse systems gains insight into the apparent percolation threshold symmetry observed earlier in systems comprising unequal circles (Consiglio et al., 2004).

  • 9.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ray, Biswajit
    Alam, Muhammad A.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Threshold of hierarchical percolating systems2012In: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, ISSN 1539-3755, E-ISSN 1550-2376, Vol. 85, no 2, p. 021109-Article in journal (Refereed)
    Abstract [en]

    Many modern nanostructured materials and doped polymers are morphologically too complex to be interpreted by classical percolation theory. Here, we develop the concept of a hierarchical percolating (percolation-within-percolation) system to describe such complex materials and illustrate how to generalize the conventional percolation to double-level percolation. Based on Monte Carlo simulations, we find that the double-level percolation threshold is close to, but definitely larger than, the product of the local percolation thresholds for the two enclosed single-level systems. The deviation may offer alternative insights into physics concerning infinite clusters and open up new research directions for percolation theory.

  • 10.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Unander, Tomas
    López Cabezas, Ana
    KTH, School of Information and Communication Technology (ICT), Electronic Systems. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Shao, Botao
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Liu, Zhiying
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. Uppsala University, Sweden.
    Feng, Yi
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Forsberg, Esteban Bernales
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Jögi, Indrek
    Gao, Xindong
    Boman, Mats
    Zheng, Li-Rong
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nilsson, Hans-Erik
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT). Uppsala University, Sweden.
    Ink-jet printed thin-film transistors with carbon nanotube channels shaped in long strips2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 8, article id 084915Article in journal (Refereed)
    Abstract [en]

    The present work reports on the development of a class of sophisticated thin-film transistors (TFTs) based on ink-jet printing of pristine single-walled carbon nanotubes (SWCNTs) for the channel formation. The transistors are manufactured on oxidized silicon wafer and flexible plastic substrates at ambient conditions. For this purpose, ink-jet printing techniques are developed aiming at high-throughput production of SWCNT thin-film channels shaped in long strips. Stable SWCNT inks with proper fluidic characteristics are formulated by polymer addition. The present work unveils, through Monte Carlo simulation and in the light of heterogeneous percolation, the underlying physics of the superiority of long-strip channels for SWCNT TFTs. It further predicts the compatibility of such a channel structure with ink-jet printing taking into account the minimum dimensions achievable by commercially available printers. The printed devices exhibit improved electrical performance and scalability, compared to previously reported ink-jet printed SWCNT TFTs. The present work demonstrates that ink-jet printed SWCNT TFTs of long-strip channels are promising building blocks for flexible electronics.

  • 11.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ye, Fei
    KTH, School of Information and Communication Technology (ICT), Material Physics, Functional Materials, FNM.
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Muhammed, Mamoun
    KTH, School of Information and Communication Technology (ICT), Material Physics, Functional Materials, FNM.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    A simple route towards high-concentration surfactant-free graphene dispersions2012In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 50, no 8, p. 3113-3116Article in journal (Refereed)
    Abstract [en]

    A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by terpineol through distillation, relying on their large difference in boiling points. Graphene can then be concentrated thanks to the volume difference between DMF and terpineol. The concentrated graphene dispersions are used to fabricate transparent conductive thin films, which possess comparable properties to those prepared by more complex methods.

  • 12.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ye, Fei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Muhammed, Mamoun
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Efficient inkjet printing of graphene2013In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 25, no 29, p. 3985-3992Article in journal (Refereed)
    Abstract [en]

    An efficient and mature inkjet printing technology is introduced for mass production of coffee-ring-free patterns of high-quality graphene at high resolution (unmarked scale bars are 100 μm). Typically, several passes of printing and a simple baking allow fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin film transistors, and micro-supercapacitors.

  • 13.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Conductivity exponents in stick percolation2010In: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics: Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, ISSN 1063-651X, E-ISSN 1095-3787, Vol. 81, no 021120Article in journal (Refereed)
    Abstract [en]

    On the basis of Monte Carlo simulations, the present work systematically investigates how conductivity exponents depend on the ratio of stick-stick junction resistance to stick resistance for two-dimensional stick percolation. Simulation results suggest that the critical conductivity exponent extracted from size-dependent conductivities of systems exactly at the percolation threshold is independent of the resistance ratio and has a constant value of 1.280 +/- 0.014. In contrast, the apparent conductivity exponent extracted from density-dependent conductivities of systems well above the percolation threshold monotonically varies with the resistance ratio, following an error function, and lies in the vicinity of the critical exponent.

  • 14.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Finite-size scaling in stick percolation2009In: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics: Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, ISSN 1063-651X, E-ISSN 1095-3787, Vol. 80, no 4Article in journal (Refereed)
    Abstract [en]

    This work presents the generalization of the concept of universal finite-size scaling functions to continuum percolation. A high-efficiency algorithm for Monte Carlo simulations is developed to investigate, with extensive realizations, the finite-size scaling behavior of stick percolation in large-size systems. The percolation threshold of high precision is determined for isotropic widthless stick systems as N(c)l(2)=5.637 26 +/- 0.000 02, with N-c as the critical density and l as the stick length. Simulation results indicate that by introducing a nonuniversal metric factor A=0.106 910 +/- 0.000 009, the spanning probability of stick percolation on square systems with free boundary conditions falls on the same universal scaling function as that for lattice percolation.

  • 15.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Understanding doping effects in biosensing using carbon nanotube network field-effect transistors2009In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 79, no 155434Article in journal (Refereed)
    Abstract [en]

    Systematic theoretical studies based on a comprehensive heterogeneous stick percolation model are performed to gain insights into the essence of doping effects in electrical sensing of biomolecules, such as proteins and DNA fragments, using carbon nanotube network field-effect transistors (CNNFETs). The present work demonstrates that the electrical response to doping of CNNFETs is primarily caused by conductance change at the electrode-nanotube contacts, in contrast to that in the channel as assumed previously. However, the presence of intertube junctions in the channel could reduce the sensitivity of CNNFET-based biosensors and is partially responsible for the experimentally observed channel-length dependent sensitivity.

  • 16.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Qiu, Zhijun
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Contact-electrode insensitive rectifiers based on carbon nanotube network transistors2008In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, no 5, p. 500-502Article in journal (Refereed)
    Abstract [en]

    This letter presents rectifiers based on the diode connection of carbon nanotube network (CNN) transistors. Despite a low density of carbon nanotubes in the CNNs, the devices can achieve excellent performance with a forward/reverse current ratio reaching 10(5). By casting nanotube suspension on oxidized Si substrates with predefined electrodes, CNN-based field-effect transistors are readily prepared. By short-circuiting the source and gate terminals, CNN-based rectifiers are realized with the rectification characteristics independent of whether Pd or Al is employed as the contact electrodes. This independence is especially attractive for applications of CNN-based transistors/rectifiers in flexible electronics with various printing techniques.

  • 17.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Percolation in random networks of heterogeneous nanotubes2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 253127Article in journal (Refereed)
    Abstract [en]

    The electrical performance of random carbon nanotube network transistors is found by Monte Carlo simulation to strongly depend on the nature of the conduction path percolating the network. When the network is percolated only by semiconducting nanotube pathways (OSPs), the transistors can directly achieve both high on current and large on/off current ratio. Based on percolation theory, the present work predicts that there exist specific nanotube coverage domains within which OSP has the highest probability and becomes predominant. Simulation results show that the coverage domains depend on the network dimension, nanotube length, and the fraction of metallic nanotubes.

  • 18.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Distinguishing self-gated rectification action from ordinary diode rectification in back-gated carbon nanotube devices2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 133111Article in journal (Refereed)
    Abstract [en]

    Self-gating leading to rectification action is frequently observed in two-terminal devices built from individual or networked single-walled carbon nanotubes (SWCNTs) on oxidized Si substrates. The current-voltage (I-V) curves of these SWCNT devices remain unaltered when switching the measurement probes. For ordinary diodes, the I-V curves are symmetric about the origin of the coordinates when exchanging the probes. Numerical simulations suggest that the self-gated rectification action should result from the floating semiconducting substrate which acts as a back gate. Self-gating effect is clearly not unique for SWCNT devices. As expected, it is absent for devices fabricated on insulating substrates.

  • 19.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Improved electrical performance of carbon nanotube thin film transistors by utilizing composite networks2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 133103Article in journal (Refereed)
    Abstract [en]

    This work presents a simple scheme of using composite carbon nanotube networks (c-CNNs) to significantly improve the electrical performance of long-channel thin film transistors based on single-walled carbon nanotubes (SWCNTs). Such c-CNNs comprise two sets of SWCNTs. A primary set consists of dense arrays of perfectly aligned long SWCNTs along the transistor channel direction. A secondary set is composed of short SWCNTs either randomly orientated or perpendicularly aligned with respect to the channel. While retaining a high on/off current ratio, the drive current in such c-CNNs is much higher than that in currently studied systems with single CNNs or SWCNT arrays.

  • 20.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Conductivity scaling in supercritical percolation of nanoparticles: not a power law2015In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 7, no 8, p. 3424-3428Article in journal (Refereed)
    Abstract [en]

    The power-law behavior widely observed in supercritical percolation systems of conductive nanoparticles may merely be a phenomenological approximation to the true scaling law not yet discovered. In this work, we derive a comprehensive yet simple scaling law and verify its extensive applicability to various experimental and numerical systems. In contrast to the power law which lacks theoretical backing, the new scaling law is explanatory and predictive, and thereby helpful to gain more new insights into percolation systems of conductive nanoparticles.

  • 21.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Corrected finite-size scaling in percolation2012In: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, ISSN 1539-3755, E-ISSN 1550-2376, Vol. 86, no 4, p. 040105-Article in journal (Refereed)
    Abstract [en]

    This Rapid Communication proposes a comprehensive scaling theory for percolation, which clarifies the intrinsic nature of finite-size scaling and effectively addresses the finite-size effects. This theory applies to extensive systems, including especially the explosive percolation. It is suggested that explosive percolation shares the same scaling law as normal percolation, but may suffer from more severe finite-size effects. Remarkably, in contrast to previous studies, relying on the framework of our theory, the present Rapid Communication suggests that for all systems, the universal scaling functions do not depend on the boundary conditions.

  • 22.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Percolation thresholds of two-dimensional continuum systems of rectangles2013In: Physical Review E. Statistical, Nonlinear, and Soft Matter Physics, ISSN 1539-3755, E-ISSN 1550-2376, Vol. 88, no 1, p. 012101-Article in journal (Refereed)
    Abstract [en]

    The present paper introduces an efficient Monte Carlo algorithm for continuum percolation composed of randomly oriented rectangles. By conducting extensive simulations, we report high-precision percolation thresholds for a variety of homogeneous systems with different rectangle aspect ratios. This paper verifies and extends the excluded area theory. It is confirmed that percolation thresholds are dominated by the average excluded areas for both homogeneous and heterogeneous rectangle systems (except for some special heterogeneous systems where the rectangle lengths differ too much from one another). In terms of the excluded areas, generalized formulas are proposed to effectively predict precise percolation thresholds for all these rectangle systems. This paper is, therefore, helpful for both practical applications and theoretical studies concerning relevant systems.

  • 23.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Prevention of graphene restacking for performance boost of supercapacitors-a review2013In: Crystals, ISSN 2073-4352, Vol. 3, no 1, p. 163-190Article, review/survey (Refereed)
    Abstract [en]

    Graphene is a promising electrode material for supercapacitors mainly because of its large specific surface area and high conductivity. In practice, however, several fabrication issues need refinement. The restacking of graphene flakes upon being packed into supercapacitor electrodes has become a critical challenge in the full utilization of graphene's large specific surface area to further improve the device performance. In this review, a variety of recent techniques and strategies are overviewed for the prevention of graphene restacking. They have been classified into several categories to improve and facilitate the discussion on the underlying ideas. Based on the overview of the existing techniques, we discuss the trends of future research in the fields.

  • 24.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics2015In: ELECTRONICS, ISSN 2079-9292, Vol. 4, no 4, p. 1033-1061Article, review/survey (Refereed)
    Abstract [en]

    Two-dimensional (2D) layered materials are anticipated to be promising for future electronics. However, their electronic applications are severely restricted by the availability of such materials with high quality and at a large scale. In this review, we introduce systematically versatile scalable synthesis techniques in the literature for high-crystallinity large-area 2D semiconducting materials, especially transition metal dichalcogenides, and 2D material-based advanced structures, such as 2D alloys, 2D heterostructures and 2D material devices engineered at the wafer scale. Systematic comparison among different techniques is conducted with respect to device performance. The present status and the perspective for future electronics are discussed.

  • 25. Liu, Zhiying
    et al.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Qiu, Zhijun
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Zheng, Li-Rong
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Zhang, Shi-Li
    On gate capacitance of nanotube networks2011In: IEEE Electron Device Letter, ISSN 0741-3106, Vol. 32, no 5, p. 641-643Article in journal (Refereed)
    Abstract [en]

    This letter presents a systematic investigation of the gate capacitance CGof thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, CG is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of CG is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.

  • 26.
    Lobov, Gleb S.
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Zhao, Yichen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Marinins, Aleksandrs
    Yan, Min
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Sugunan, Abhilash
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Thylen, Lars
    KTH, School of Biotechnology (BIO).
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Ostling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Toprak, Muhammet S.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Popov, Sergei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Size Impact of Ordered P3HT Nanofibers on Optical Anisotropy2016In: Macromolecular Chemistry and Physics, ISSN 1022-1352, E-ISSN 1521-3935, Vol. 217, no 9, p. 1089-1095Article in journal (Refereed)
    Abstract [en]

    Poly-3-hexylthiophene (P3HT) nanofibers are 1D crystalline structures with semiconductor properties. When P3HT nanofi bers are dispersed in nonconducting solvent, they react to external alternate electric field by aligning along the field lines. This can be used to create layers of ordered nanofi bers and is referred to as alternating current poling method. P3HT nanofi bers with three different size distributions are fabricated, using self-assembly mechanism in marginal solvents, and used for the alignment studies. Anisotropic absorption of oriented 2 mu m long nanofi bers exponentially increases with the magnitude of applied field to a certain asymptotic limit at 0.8 V mu m(-1), while 100-500 nm long nanofi bers respond to electric field negligibly. Effective optical birefringence of oriented 2 mu m long nanofi bers is calculated, based on the phase shift at 633 nm and the average layer thickness, to be 0.41. These results combined with further studies on real-time control over orientation of P3HT nanofi bers in liquid solution or host system are promising in terms of exploiting them in electroabsorptive and electrorefractive applications.

  • 27.
    Lobov, Gleb S.
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Zhao, Yichen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Marinins, Aleksandrs
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Yan, Min
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Li, Jiantong
    Toprak, Muhammet S.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Sugunan, A.
    Thylén, Lars
    KTH, School of Biotechnology (BIO). Hewlett-Packard Laboratories, United States.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT).
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Popov, Sergei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Electric field induced optical anisotropy of P3HT nanofibers in a liquid solution2015In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 5, no 11, p. 2642-2647Article in journal (Refereed)
    Abstract [en]

    The nanofiber morphology of regioregular Poly-3- hexylthiophene (P3HT) is a 1D crystalline structure organized by π - π stacking of the backbone chains. In this study, we report the impact of electric field on the orientation and optical properties of P3HT nanofibers dispersed in liquid solution. We demonstrate that alternating electric field aligns nanofibers, whereas static electric field forces them to migrate towards the cathode. The alignment of nanofibers introduces anisotropic optical properties, which can be dynamically manipulated until the solvent has evaporated. Time resolved spectroscopic measurements revealed that the electro-optical response time decreases significantly with the magnitude of applied electric field. Thus, for electric field 1.3 V ·μm-1 the response time was measured as low as 20 ms, while for 0.65 V ·μm-1 it was 110-150 ms. Observed phenomenon is the first mention of P3HT supramolecules associated with electrooptical effect. Proposed method provides real time control over the orientation of nanofibers, which is a starting point for a novel practical implementation. With further development P3HT nanofibers can be used individually as an anisotropic solution or as an active component in a guest-host system.

  • 28.
    Lobov, Gleb S.
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Zhao, Yichen
    KTH, School of Information and Communication Technology (ICT).
    Marinins, Aleksandrs
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Yan, Min
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Toprak, Muhammet
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Sugunan, A.
    Thylen, Lars
    KTH, School of Biotechnology (BIO).
    Wosinski, L.ech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Fotonik och mikrovågsteknik, FMI.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Popov, Sergei Yu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Electro-optical response of P3HT nanofibers in liquid solution2015In: Asia Communications and Photonics Conference, ACPC 2015, 2015Conference paper (Refereed)
    Abstract [en]

    AC electric poling introduces in P3HT nanofibers anisotropic electro-optical response and birefringence. Along with birefringence, such material exhibits strong amplitude modulation which makes it more efficient alternative to liquid crystals. © 2015 OSA.

  • 29.
    Lobov, Gleb
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Zhao, Yichen
    KTH, School of Information and Communication Technology (ICT).
    Marinins, Aleksandrs
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Yan, Min
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT).
    Sugunan, A.
    Thylén, Lars
    KTH, School of Biotechnology (BIO). Hewlett-Packard Laboratories, United States.
    Wosinski, L.ech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Fotonik och mikrovågsteknik, FMI.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Toprak, Muhammet
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Popov, Sergei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Dynamic Manipulation of Optical Anisotropy of Suspended Poly-3-hexylthiophene Nanofibers2016In: Advanced Optical Materials, ISSN 2195-1071, Vol. 4, no 10, p. 1651-1656Article in journal (Refereed)
    Abstract [en]

    Poly-3-hexylthiophene (P3HT) nanofibers are 1D crystalline semiconducting nanostructures, which are known for their application in photovoltaics. Due to the internal arrangement, P3HT nanofibers possess optical anisotropy, which can be enhanced on a macroscale if nanofibers are aligned. Alternating electric field, applied to a solution with dispersed nanofibers, causes their alignment and serves as a method to produce solid layers with ordered nanofibers. The transmission ellipsometry measurements demonstrate the dichroic absorption and birefringence of ordered nanofibers in a wide spectral range of 400–1700 nm. Moreover, the length of nanofibers has a crucial impact on their degree of alignment. Using electric birefringence technique, it is shown that external electric field applied to the solution with P3HT nanofibers can cause direct birefringence modulation. Dynamic alignment of dispersed nanofibers changes the refractive index of the solution and, therefore, the polarization of transmitted light. A reversible reorientation of nanofibers is organized by using a quadrupole configuration of poling electrodes. With further development, the described method can be used in the area of active optical fiber components, lab-on-chip or sensors. It also reveals the potential of 1D conducting polymeric structures as objects whose highly anisotropic properties can be implemented in electro-optical applications.​

  • 30.
    Loiko, Pavel
    et al.
    ITMO Univ, 49 Kronverkskiy Pr, St Petersburg 197101, Russia..
    Maria Serres, Josep
    Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain..
    Delekta, Szymon Sollami
    KTH, School of Information and Communication Technology (ICT).
    Kifle, Esrom
    Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain..
    Mateos, Xavier
    Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain.;Max Born Inst Nonlinear Opt & Short Pulse Spect, 2A Max Born Str, D-12489 Berlin, Germany..
    Baranov, Alexander
    ITMO Univ, 49 Kronverkskiy Pr, St Petersburg 197101, Russia..
    Aguilo, Magdalena
    Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain..
    Diaz, Francesc
    Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain..
    Griebner, Uwe
    Max Born Inst Nonlinear Opt & Short Pulse Spect, 2A Max Born Str, D-12489 Berlin, Germany..
    Petrov, Valentin
    Max Born Inst Nonlinear Opt & Short Pulse Spect, 2A Max Born Str, D-12489 Berlin, Germany..
    Popov, Sergei
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Li, Jiantong
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT).
    Inkjet-Printing of Graphene Saturable Absorbers for similar to 2 mu m Bulk and Waveguide Lasers2017In: 2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2017Conference paper (Refereed)
    Abstract [en]

    We report on inkjet-printing of graphene saturable absorbers (SAs) suitable for passive Q-switching of similar to 2-mu m bulk and waveguide lasers. Using graphene-SA in a microchip Tm:KLu(WO4)(2) laser, 1.2 mu J/136 ns pulses are generated at 1917 nm.

  • 31. Qu, Minni
    et al.
    Qiu, Zhi-Jun
    Zhang, Zhi-Bin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Li, Hui
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    Charge-Injection-Induced Time Decay in Carbon Nanotube Network-Based FETs2010In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 31, no 10, p. 1098-1100Article in journal (Refereed)
    Abstract [en]

    A voltage-pulse method is utilized to investigate the charge-injection-induced time decay of the source-drain current of field-effect transistors with randomly networked single-walled carbon nanotubes (CNTs) as the conduction channel. The relaxation of trapped carriers in the CNT networks can be accounted for by assuming two exponential decays occurring simultaneously. The slow decay is characterized by a time constant comparable to literature data obtained for a carrier recombination in the semiconducting CNTs. The faster decay with a time constant that has a smaller order of magnitude is attributed to the annihilation of trapped carriers in metallic CNTs or at metal-CNT contacts. Both time constants are gate-bias dependent.

  • 32.
    Zhang, Zhibin
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Cabezas, Ana Lopez
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Characterization of acid-treated carbon nanotube thin films by means of Raman spectroscopy and field-effect response2009In: Chemical Physics Letters, ISSN 0009-2614, E-ISSN 1873-4448, Vol. 476, no 4-6, p. 258-261Article in journal (Refereed)
    Abstract [en]

    By combining Raman spectroscopy with transistor transfer characteristics, acid treatment of single-walled carbon nanotubes (SWCNTs) in a mixture of concentrated HNO3/H2SO4 has been characterized. The acid treatment results in a sharp decrease in the Raman resonant signals of the metallic SWCNTs but no observable change in those of the semiconducting SWCNTs. However, the acid treatment causes disappearing gate modulation of the thin-film transistors made of the SWCNTs, contrary to what would be expected referring to the Raman results. These experimental results suggest that the energy band of the semiconducting SWCNTs is significantly affected by absorbates induced by the acid treatment.

  • 33.
    Zhang, Zhibin
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Qu, Minni
    Cabezas, Ana Lopez
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic, Computer and Software Systems, ECS.
    Zhang, Shi-Li
    Photo-Activated Interaction Between P3HT and Single-Walled Carbon Nanotubes Studied by Means of Field-Effect Response2009In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 12, p. 1302-1304Article in journal (Refereed)
    Abstract [en]

    It is shown in this letter that the field-effect electrical response of transistors with their channel made of networks of single-walled carbon nanotubes (SWNTs) embedded in a poly(3-hexylthiophene) (P3HT) matrix can be significantly altered by light illumination. The experimental results indicate a photo-activated electron transfer from P3HT selectively to the semiconducting SWNTs. This finding points to a potential optoelectronic application of such a field-effect device as a photo-triggered electronic switch.

  • 34.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Smith, Anderson
    KTH, School of Information and Communication Technology (ICT).
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Delekta, Szymon Sollami
    KTH, School of Information and Communication Technology (ICT).
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. Siegen University, Germany.
    Emerging graphene device technologies2016In: Emerging Nanomaterials and Devices, Electrochemical Society, 2016, Vol. 75, no 13, p. 17-35, article id 13Conference paper (Refereed)
    Abstract [en]

    Graphene has a wide range of attractive electrical and mechanical properties. This unique blend of properties make it a good candidate for emerging and future device technologies, such as sensors, high frequency electronics, and energy storage devices. In this review paper, each of the aforementioned applications will be explored along with demonstrations of their operating principles. Specifically, we explore pressure and humidity sensors, graphene base transistor for high frequency applications, and supercapacitors. In addition, this paper provides a general overview of these graphene technologies and, in the case of pressure and humidity sensors, benchmarking against other competing technologies. This paper further shows possible and prospective paths that are suitable for future graphene research to take.

1 - 34 of 34
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