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  • 1.
    Barth, Christopher
    et al.
    Univ Illinois, Elect & Comp Engn Dept, 1406 W Green St, Urbana, IL 61801 USA..
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Foulkes, Thomas
    Univ Illinois, Elect & Comp Engn Dept, 1406 W Green St, Urbana, IL 61801 USA..
    Coulson, Keith
    Univ Illinois, Mech Sci & Engn Dept, Urbana, IL USA..
    Sotelo, Jesus
    Univ Illinois, Mech Sci & Engn Dept, Urbana, IL USA..
    Modeer, Tomas
    Univ Illinois, Elect & Comp Engn Dept, 1406 W Green St, Urbana, IL 61801 USA..
    Miljkovic, Nenad
    Univ Illinois, Mech Sci & Engn Dept, Urbana, IL USA..
    Pilawa-Podgurski, Robert C. N.
    Univ Illinois, Elect & Comp Engn Dept, 1406 W Green St, Urbana, IL 61801 USA..
    Experimental Evaluation of a 1 kW, Single-Phase, 3-Level Gallium Nitride Inverter in hxtreme Cold Environment2017In: 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), IEEE , 2017, p. 717-723Conference paper (Refereed)
    Abstract [en]

    This work investigates the potential for high power density, high efficiency power conversion at extreme cold temperatures, for hybrid electric aircraft applications. A 1 kW GaN-based 3-level power converter was designed and successfully tested from room temperature down to -140 degrees C, using a custom milled cold-plate. Along with the first demonstration of a flying capacitor multi-level converter and associated components at such low temperature, this work characterized the effect on power conversion losses of various components as a function of temperature. A key finding is that careful attention must be paid to the passive component losses which can increase as the temperature is reduced.

  • 2.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics2016Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

  • 3.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Barth, Christopher
    University of Illinois at Urbana-Champaign.
    Foulkes, Thomas
    University of Illinois at Urbana-Champaign.
    Modeer, Tomas
    University of Illinois at Urbana-Champaign.
    Pilawa-Podgurski, Robert C.N.
    University of Illinois at Urbana-Champaign.
    Experimental Evaluation of a 1 kW, Single-Phase, 3-LevelGaN Inverter at Extreme Cold EnvironmentsManuscript (preprint) (Other academic)
    Abstract [en]

    Low temperature of operation of power electronics applications enables higher efficiencies and higher reliability. Moreover, combining lower temperature of operation with rapidly maturing wide-bandgap semiconductors materials, such as gallium-nitride, could facilitate higher power density designs. In this study, the low temperature performance of a 1 kW single phase, 3-level GaN inverter has been evaluated. A 33% reduction in the losses was measured during rated operation at -75 °C. To show the impact of temperature on the power loss breakdown, a comparison of the estimated and measured losses has been performed.

  • 4.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Foulkes, Thomas
    Barth, Christopher
    Modeer, Tomas
    Pilawa-Podgurski, Robert C. N.
    Experimental Characterization of Enhancement Mode Gallium-Nitride Power Field-Effect Transistors at Cryogenic Temperatures2016In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 129-134Conference paper (Refereed)
    Abstract [en]

    High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At - 195 degrees C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures.

  • 5.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Foulkes, Thomas
    University of Illinois at Urbana-Champaign.
    Barth, Christopher
    University of Illinois at Urbana-Champaign.
    Modeer, Tomas
    University of Illinois at Urbana-Champaign.
    Pilawa-Podgurski, Robert C.N.
    University of Illinois at Urbana-Champaign.
    Experimental characterization of Enhancement ModeGaN power FETs at cryogenic temperaturesManuscript (preprint) (Other academic)
    Abstract [en]

    High power density converters in combination with cryogenic power systems could have a significant effect on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC GaN power FET was evaluated. At -195 °C, an 85 % reduction in on-state resistance, a 16 % increase in threshold voltage, and no major changes in switching characteristics were observed.

  • 6.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Kargarrazi, Saleh
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    High Temperature Passive Components for Extreme EnvironmentsManuscript (preprint) (Other academic)
    Abstract [en]

    Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology has been tested up to 300 °C and, two different designs of inductors have been tested up to 600 °C.

  • 7.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Kargarrazi, Saleh
    KTH, School of Information and Communication Technology (ICT), Elektronics, Integrated devices and circuits.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    High-Temperature Passive Components for Extreme Environments2016In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 271-274Conference paper (Refereed)
    Abstract [en]

    Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300 degrees C and, three different designs of inductors have been tested up to 700 degrees C.

  • 8.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    Switching Performance of Parallel-Connected Power Modules with SiC MOSFETs2014In: 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE conference proceedings, 2014, p. 3712-3717Conference paper (Refereed)
    Abstract [en]

    Parallel connection of silicon carbide power modules is a possible solution in order to reach higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible operation of the parallel-connected power modules. High switching speeds are desired in order to achieve high efficiencies in medium and high-power applications but parasitic elements may give rise to a non-uniform current sharing during turn-on and turn-off, leading to non-uniformly distributed switching losses. This paper presents the switching performance of parallel-connected power modules populated with several silicon carbide metal-oxide-semiconductor field-effect-transistors chips. It is experimentally shown that turn-on and turn-off switching times of approximately 50 ns and 100 ns, respectively, can be reached, while an acceptably uniform transient current sharing is obtained. Moreover, based on the obtained results, an efficiency of approximately 99.35% for a three-phase converter rated at 312 kVA with a switching frequency of 20 kHz can be estimated.

  • 9.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Dual-function gate driver for a power module with SiC junction field transistors2013In: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, IEEE , 2013, p. 245-250Conference paper (Refereed)
    Abstract [en]

    Driving a high-power module which is populated with several parallel-connected silicon carbide junction field-effect transistor chips must be done appropriately. Parasitic elements may give rise to oscillations during turn-on and turn-off. Fast and oscillation-free switching performance is desired in order to achieve a high efficiency. The key-issue in order to fulfill these two requirements is the design of a sophisticated gate driver. This paper proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current and voltage suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 140 ns and 165 ns respectively can be reached, while the magnitude of the current oscillations is kept at an acceptable level. Moreover, using the proposed gate driver an efficiency of approximately 99.6% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.

  • 10.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion. Warsaw University of Technology, Poland .
    Sadik, Diane-Perle
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors2014In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, p. 2367-2379Article in journal (Refereed)
    Abstract [en]

    Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when high efficiencies are targeted. This paper deeply investigates several versions of gate-drive units and proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 130 and 185 ns respectively can be reached, while the magnitude of the current oscillations is kept at an adequate level. Moreover, using the proposed gate driver an efficiency of approximately 99.7% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.

  • 11.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    Rabkowski, Jacek
    Sadik, Diane-Perle
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Tolstoy, Georg
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules2015In: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, no 6, p. 4664-4676Article in journal (Refereed)
    Abstract [en]

    This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter.

  • 12.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Tolstoy, Georg
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Sadik, Diane-Perle
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications2014Conference paper (Refereed)
    Abstract [en]

    This paper presents the design process of a 312 kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase-leg. The design processes of the gate-drive circuits with short-circuit protection and the power circuit layout are also presented. Electrical measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Experimental results showing the electrical performance during steady-state operation of the power converter are also shown. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been estimated for the inverter.

  • 13.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Sadik, Diane-Perle
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Hilber, Patrik
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter2016In: IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, E-ISSN 2168-6785, Vol. 4, no 3, p. 996-1006Article in journal (Refereed)
    Abstract [en]

    Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

  • 14.
    Colmenares, Juan
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Sadik, Diane-Perle
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Hilber, Patrik
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications2016In: 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 746-753, article id 7467955Conference paper (Refereed)
    Abstract [en]

    Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired tradeoff between efficiency and reliability. A reliability analysis has been performed on a three-phase inverter for motor drive applications rated at 312 kVA. This analysis has shown that the gate voltage stress determines the reliability of the complete system. Nevertheless, decreasing the positive gate-source voltage could increase the reliability of the system approximately 8 times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure approximately 5 times.

  • 15.
    Nee, Hans-Peter
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Tolstoy, Georg
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Sadik, Diane
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Bakowski, Mietek
    Acreo Swedish ICT AB, Sweden.
    Lim, Jang-Kwon
    Acreo AB, Kista.
    Antonopoulos, Antonios
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Ängquist, Lennart
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Zdanowski, Mariusz
    Warsaw University of Technology.
    High-Efficiency Power Conversion Using Silicon Carbide Power Electronics2013In: Proc. of International Conference on silicon carbide and related materials (ICSCRM) 2013, Miyazaki, Japan, Sept. 29–Oct. 4, 2013, Trans Tech Publications Inc., 2013, p. 1083-1088Conference paper (Refereed)
    Abstract [en]

    The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.

  • 16.
    Sadik, Diane-Perle
    et al.
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Kostov, Konstantin
    Giezendanner, Florian
    Ranstad, Per
    Analysis of Parasitic Elements of SiC Power Modules with Special Emphasis on Reliability Issues2016In: 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016, Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 1018-1023Conference paper (Refereed)
    Abstract [en]

    Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic elements have been extracted. The model is validated through experiments. An analysis of the impact of these parasitic elements on the gate-source voltage on the chip has been performed for both low switching speeds and high switching speeds. These results reveal potential reliability issues for the gate-oxide if higher switching speeds are targeted.

  • 17.
    Sadik, Diane-Perle
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Lim, Jang-Kwon
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs2013In: 2013 15th European Conference on Power Electronics and Applications, EPE 2013, 2013Conference paper (Refereed)
    Abstract [en]

    An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices.

  • 18.
    Sadik, Diane-Perle
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Tolstoy, Georg
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection2014In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE , 2014, p. 6910789-Conference paper (Refereed)
    Abstract [en]

    An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.

  • 19.
    Sadik, Diane-Perle
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Tolstoy, Georg
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Bakowski, Mietek
    Rabkowski, Jacek
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Short-Circuit Protection Circuits for Silicon Carbide Power Transistors2016In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, ISSN 0278-0046, Vol. 63, no 4, p. 1995-2004, article id ITIEDArticle in journal (Refereed)
    Abstract [en]

    An experimental analysis of the behavior under short-circuit conditions of three different siliconcarbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a shortcircuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 µs were achieved.

  • 20.
    Sadik, Diane-Perle
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Kostov, Konstantin
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Giezendanner, Florian
    Ranstad, Per
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Analysis of Parasitic Elements of SiC Power Modules With Special Emphasis on Reliability Issues2016In: IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, E-ISSN 2168-6785, Vol. 4, no 3, p. 988-995Article in journal (Refereed)
    Abstract [en]

    Commercially available silicon carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic elements have been extracted. The model is validated through experiments. An analysis of the impact of these parasitic elements on the gate-source voltage on the chip has been performed for both low switching speeds and high switching speeds. These results reveal potential reliability issues for the gate oxide if higher switching speeds are targeted.

  • 21.
    Tolstoy, Georg
    et al.
    KTH.
    Ranstad, P.
    Colmenares, Juan
    KTH.
    Giezendanner, F.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Dual control used in series-loaded resonant converter with SiC devices2015In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, IEEE , 2015, p. 495-501Conference paper (Refereed)
    Abstract [en]

    This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the SiC metal oxide-semiconductor field-effect transistor (MOSFET) with DuC increases the overall efficiency of the SLR converter compared to frequency modulation (FM). For the SiC bipolar junction transistors (BJT), the loss reduction with DuC instead of FM is not as dramatic as for the MOSFET case. Regardless of which transistor type used, the switching losses are around 20 % of the total losses at around 25 kHz. With DuC an almost constant switching frequency is used over the full voltage range compared to FM were the switching frequency increases by 13 %. Additionally a reduction of capacitive snubbers is achieved with DuC.

  • 22.
    Tolstoy, Georg
    et al.
    KTH.
    Ranstad, P.
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electric power and energy systems.
    Giezendanner, F.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter2015In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, p. 1-9Conference paper (Refereed)
    Abstract [en]

    SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.

  • 23.
    Tolstoy, Georg
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Ranstad, Per
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Giezendanner, Florian
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Dual control used in series-loaded resonant converter with SiC devicesManuscript (preprint) (Other academic)
  • 24.
    Tolstoy, Georg
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Ranstad, Per
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Giezendanner, Florian
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Experimental evaluation of SiC BJT and SiC MOSFET in a series resonantconverterManuscript (preprint) (Other academic)
  • 25.
    Tolstoy, Georg
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Ranstad, Per
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Giezendanner, Florian
    Rabkowski, Jacek
    Warsaw University of Technology, Poland.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter2014In: 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, IEEE conference proceedings, 2014, p. 6911042-Conference paper (Refereed)
    Abstract [en]

    Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.

  • 26.
    Tolstoy, Georg
    et al.
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Ranstad, Per
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    Peftitsis, Dimosthenis
    Giezendanner, Florian
    Rabkowski, Jacek
    Warsaw University of Technology, Poland.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
    An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converterManuscript (preprint) (Other academic)
  • 27. Velander, Erik
    et al.
    Kruse, Lennart ( Zdansky)
    Wiik, Thomas (Lundstrom)
    Wiberg, Anders
    Colmenares, Juan
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption2018In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, no 2, p. 1143-1153Article in journal (Refereed)
    Abstract [en]

    In this paper, a new low-loss turn-ON concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under the constraint that the output voltages slopes are limited in order to protect the motor windings. Moreover, analyses of the IGBT turn-ON and diode reverse recovery voltage slopes are presented concluding that the diode reverse recovery is the worst case. The concept includes a low-cost measurement of the free-wheeling diode current and temperature by the gate driver without necessity of acquiring this information from the converter control board. By using this concept, the output dv/dt at the diode turn-OFF can be kept approximately constant regardless of the commutated current and junction temperature. Hence, the switching losses could be decreased for the currents and temperatures where the voltage slopes are lower when using a conventional gate driver optimized for the worst case. Moreover, results are shown for one such power semiconductor, showing a total switching loss reduction of up to 28% in comparison with a gate driver without current and temperature measurement. Finally, this concept is particularly suitable for high power semiconductor modules in half-bridge configuration which are recently proposed by several suppliers.

1 - 27 of 27
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