Change search
Refine search result
1 - 16 of 16
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Ekström, Mattias
    et al.
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Hou, Shuoben
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing2018In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications, 2018, Vol. 924, p. 389-392Conference paper (Refereed)
    Abstract [en]

    Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

  • 2.
    Elahipanah, Hossein
    et al.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Asadollahi, Ali
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Ekström, Mattias
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    A wafer-scale Ni-salicide contact technology on n-type 4H-SiC2017In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 4, p. P197-P200Article in journal (Refereed)
    Abstract [en]

    A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

  • 3.
    Elahipanah, Hossein
    et al.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Kargarrazi, Saleh
    KTH, School of Information and Communication Technology (ICT).
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT).
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits2017In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 38, no 10, p. 1429-1432Article in journal (Refereed)
    Abstract [en]

    High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.

  • 4.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits. Ascatron AB.
    Rodriguez, Saul
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, B. Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Rusu, Ana
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Silicon Carbide BJT Oscillator Design Using S-Parameters2018In: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018., 2018Conference paper (Refereed)
    Abstract [en]

    Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation isfurther aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, analternative small-signal, S-parameter based design method can be employed directly without goinginto complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connectedby RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

  • 5.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Rodriguez, Saul
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, B. Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Rusu, Ana
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Silicon carbide BJT oscillator design using S-parameters2019In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 674-678Conference paper (Refereed)
    Abstract [en]

    Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

  • 6.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS).
    Elahipanah, Hossein
    KTH.
    Schröder, Stephan
    KTH.
    Rodriguez, Saul
    KTH.
    Malm, B. Gunnar
    KTH.
    Östling, Mikael
    KTH.
    Rusu, Ana
    KTH.
    An Intermediate Frequency Amplifier for High-Temperature Applications2018In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, no 4, p. 1411-1418Article in journal (Refereed)
    Abstract [en]

    This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

  • 7.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Schröder, Stephan
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Rodriguez, Saul
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, Bengt Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Rusu, Ana
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    An Intermediate Frequency Amplifier for High-Temperature Applications (vol 65, pg 1411, 2018)2019In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 8, p. 3694-3694Article in journal (Refereed)
    Abstract [en]

    This correspondence highlights an error in the above-titled paper. The corrected material is presented here.

  • 8.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits. Ascatron AB.
    Zumbro, John E.
    University of Arkansas.
    Rodriguez, Saul
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, B. Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Mantooth, H. Alan
    University of Arkansas.
    Rusu, Ana
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications2019In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 7, no 1, p. 191-195Article in journal (Refereed)
    Abstract [en]

    This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.

  • 9.
    Hussain, Muhammad Waqar
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS).
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Zumbro, John E.
    University of Arkansas.
    Schröder, Stephan
    KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.
    Rodriguez, Saul
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, B. Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Mantooth, H. Alan
    University of Arkansas.
    Rusu, Ana
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology2018In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 6, p. 855-858Article in journal (Refereed)
    Abstract [en]

    This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

  • 10. Kargarrazi, S.
    et al.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT).
    Rodriguez, Saul
    KTH, School of Information and Communication Technology (ICT).
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT).
    500 °c, High Current Linear Voltage Regulator in 4H-SiC BJT Technology2018In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 4, p. 548-551Article in journal (Refereed)
    Abstract [en]

    This letter reports on a fully integrated 2-linear voltage regulator operational in a wide temperature range from 25 °C up to 500 °C fabricated in 4H-SiC technology. The circuit provides a stable output voltage with less than 1% variation in the entire temperature range. This letter demonstrates the first power supply solution providing both high-temperature (up to 500 °C) and high-load driving capabilities (up to 2).

  • 11.
    Kargarrazi, Saleh
    et al.
    Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA..
    Elahipanah, Hossein
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Saggini, Stefano
    DIEGM Univ Udine, I-33100 Udine, Italy..
    Senesky, Debbie
    Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA..
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    500 degrees C SiC PWM Integrated Circuit2019In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 34, no 3, p. 1997-2001Article in journal (Refereed)
    Abstract [en]

    This letter reports on a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator. The circuit has been characterized and shown to be operational in a wide temperature range from 25 to 500 degrees C. The operating frequency of the PWM varies in the range of 160 to 210 kHz and the duty cycle varies less than 17% over the entire temperature range. The proposed PWM is suggested to efficiently and reliably control power converters in extreme environments.

  • 12.
    Malm, B. Gunnar
    et al.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT).
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Gated base structure for improved current gain in SiC bipolar technology2017In: 2017 47th European Solid-State Device Research Conference (ESSDERC) 11-14 Sept. 2017, Editions Frontieres , 2017, p. 122-125Conference paper (Refereed)
    Abstract [en]

    Silicon Carbide (SiC) bipolar integrated circuits are a promising technology for extreme environment applications. SiC bipolar technology shows stable operation over a wide range of temperature. However, the current gain of the devices is suffering from high surface recombination, due to poor oxide passivation. In this paper we propose a gated base structure that offers improved current gain control. A polysilicon gate is formed on the passivation oxide on top of the base-link region. We investigate the current gain as a function of gate bias and temperature. A negative gate bias improves the gain at low collector current by more than 30% by suppressing the surface recombination. Measurements are presented at temperatures ranging from 300 K to 550 K and the gain is consistently improved. The proposed structure is also useful as a process monitor for the passivation oxide quality.

  • 13.
    Salemi, Arash
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Jacobs, Keijo
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain2018In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 1, p. 63-66Article in journal (Refereed)
    Abstract [en]

    Implantation-free mesa-etched ultra-high-voltage (0.08 mm(2)) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension is utilized to obtain a high and stable breakdown voltage without ion implantation. The open-base blocking voltage of 15.8 kV at a leakage current density of 0.1 mA/cm(2) is achieved. Different cell geometries (single finger, square, and hexagon cell geometries) are also compared.

  • 14.
    Salemi, Arash
    et al.
    KTH.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    10+ kV implantation-free 4H-SiC PiN diodes2017In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Ltd , 2017, p. 423-426Conference paper (Refereed)
    Abstract [en]

    Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized junction termination extension (O-JTE) is implemented in order to achieve a high breakdown voltage. The diodes design allows a high breakdown voltage of about 19.3 kV according to simulations by Sentaurus TCAD. No breakdown voltage is recorded up to 10 kV with a very low leakage current of 0.1 μA. The current spreading within the thick drift layer is considered and a voltage drop (VF) of 8.3 V and 11.4 V are measured at 50 A/cm2 and 100 A/cm2, respectively. The differential on-resistance (Diff. Ron) of 67.7 mΩ.cm2 and 55.7 mΩ.cm2 are measured at 50 A/cm2 and 100 A/cm2, respectively.

  • 15.
    Salemi, Arash
    et al.
    KTH.
    Elahipanah, Hossein
    KTH.
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS).
    Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes2018In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications Inc., 2018, p. 568-572Conference paper (Refereed)
    Abstract [en]

    Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

  • 16.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    State of the art Power Switching Devices in SiC and their Applications2016In: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), IEEE, 2016, p. 122-123Conference paper (Refereed)
    Abstract [en]

    This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.

1 - 16 of 16
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf