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  • 1.
    Linnarsson, Margareta K.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Material Physics, MF.
    Hallén, Anders
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Khartsev, Sergiy
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Suvanam, Sethu Saveda
    KTH, School of Information and Communication Technology (ICT).
    Usman, Muhammad
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering2017In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 50, no 49, article id 495111Article in journal (Refereed)
    Abstract [en]

    The formation of interfacial oxides during heat treatment of dielectric films on 4H-SiC has been studied. The 4H-SiC surface has been carefully prepared to create a clean and abrupt interface to Al2O3. An amorphous, 3 nm thick, Al2O3 film has been prepared on 4H-SiC by atomic layer deposition and rapid thermal annealing was then performed in N2O ambient at 700 degrees C and 1100 degrees C during 1 min. The samples were studied by time-of-flight medium energy ion scattering (ToF-MEIS), with sub-nanometer depth resolution and it is seen that, at both annealing temperatures, a thin SiOx (1 <= x <= 2) is formed at the interface. Our results further indicate that carbon remains in the silicon oxide in samples annealed at 700 degrees C. Additional electrical capacitance voltage measurements indicate that a large concentration of interface traps is formed at this temperature. After 1100 degrees C annealing, both MEIS and XRD measurements show that these features disappear, in accordance with electrical data.

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